91751301 by Thales Avionics with NSN 5961014338841 - Submit a Quote
| Part No. : 91751301 | Manufacturer : Thales Avionics | NSN : 5961-01-433-8841 |
| Item Name : Semiconductor Device Diode | CAGE Code : F6481 | FSC : 5961 Semiconductor Devices and Associated Hardware |
ASAP Aviation Procurement is pleased to announce that part number 91751301 of NSN 5961014338841 is now available and in stock. We can get you one of the fastest and most competitive quotes on this part. Part number 91751301 is a semiconductor device diode manufactured by thales avionics under CAGE Code F6481. Simply fill out the Request for Quote (RFQ) form provided here to get started on your quote.In order to make sure that we get you your quote in a timely manner, please take the time to make sure that all fields are completely filled out, particularly the asterisk-marked (*) fields like Parts Needed By and Quantity (ea).
We will be using your response to these fields to calculate your quote. Within 15 minutes of receiving your RFQ, a member of our sales team will contact you with your quote. ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is a leading distributor of new and obsolete NSN parts for the aerospace, civil aviation, and defense industries. With our inventory of more than 2 billion parts sourced from over 5000 manufacturers from around the world, we do our level best to become your go-to one-stop shop. And to help us offer you the best streamlined parts procurement experience, we have advanced shipping facilities across USA. 91751301 thales avionics is in stock.
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NSN Information for Part Number 91751301 with NSN 5961-01-433-8841, 5961014338841
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-433-8841 Item Description: SEMICONDUCTOR DEVICE,DIODE | 5961 | 014338841 | N | |||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 91751301 | 5 | 2 | 5 |
Characteristics Data of NSN 5961-01-433-8841, 5961014338841MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS" ABHP OVERALL LENGTH 0.185 INCHES MINIMUM AND 0.210 INCHES MAXIMUM" ABJT TERMINAL LENGTH 0.010 INCHES MINIMUM AND 0.020 INCHES MAXIMUM" AXGY MOUNTING METHOD TERMINAL" AYQS TERMINAL CIRCLE DIAMETER 0.092 INCHES MINIMUM AND 0.100 INCHES MAXIMUM" CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE" CTMZ SEMICONDUCTOR MATERIAL SILICON" CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 200.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS" CTQX CURRENT RATING PER CHARACTERISTIC 10.00 MICROAMPERES COLLECTOR CURRENT, DC PEAK" CTRD POWER RATING PER CHARACTERISTIC 1.0 WATTS ANY ACCEPTABLE PRESET" CTRG CAPACITANCE RATING IN PICOFARADS 1.5 MAXIMUM" CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS AMBIENT AIR" TTQY TERMINAL TYPE AND QUANTITY 2 ELECTRON TUBE BASE" ABBH INCLOSURE MATERIAL GLASS" ABHP OVERALL LENGTH 0.185 INCHES MINIMUM AND 0.210 INCHES MAXIMUM" ABJT TERMINAL LENGTH 0.010 INCHES MINIMUM AND 0.020 INCHES MAXIMUM" AXGY MOUNTING METHOD TERMINAL" AYQS TERMINAL CIRCLE DIAMETER 0.092 INCHES MINIMUM AND 0.100 INCHES MAXIMUM" CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE" CTMZ SEMICONDUCTOR MATERIAL SILICON" CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 200.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS" CTQX CURRENT RATING PER CHARACTERISTIC 10.00 MICROAMPERES COLLECTOR CURRENT, DC PEAK" CTRD POWER RATING PER CHARACTERISTIC 1.0 WATTS ANY ACCEPTABLE PRESET" CTRG CAPACITANCE RATING IN PICOFARADS 1.5 MAXIMUM" CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS AMBIENT AIR" TTQY TERMINAL TYPE AND QUANTITY 2 ELECTRON TUBE BASE"
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS" |
| ABHP | OVERALL LENGTH | 0.185 INCHES MINIMUM AND 0.210 INCHES MAXIMUM" |
| ABJT | TERMINAL LENGTH | 0.010 INCHES MINIMUM AND 0.020 INCHES MAXIMUM" |
| AXGY | MOUNTING METHOD | TERMINAL" |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.092 INCHES MINIMUM AND 0.100 INCHES MAXIMUM" |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE" |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MICROAMPERES COLLECTOR CURRENT, DC PEAK" |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS ANY ACCEPTABLE PRESET" |
| CTRG | CAPACITANCE RATING IN PICOFARADS | 1.5 MAXIMUM" |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR" |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 ELECTRON TUBE BASE" |
| ABBH | INCLOSURE MATERIAL | GLASS" |
| ABHP | OVERALL LENGTH | 0.185 INCHES MINIMUM AND 0.210 INCHES MAXIMUM" |
| ABJT | TERMINAL LENGTH | 0.010 INCHES MINIMUM AND 0.020 INCHES MAXIMUM" |
| AXGY | MOUNTING METHOD | TERMINAL" |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.092 INCHES MINIMUM AND 0.100 INCHES MAXIMUM" |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE" |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MICROAMPERES COLLECTOR CURRENT, DC PEAK" |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS ANY ACCEPTABLE PRESET" |
| CTRG | CAPACITANCE RATING IN PICOFARADS | 1.5 MAXIMUM" |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR" |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 ELECTRON TUBE BASE" |
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