311A7937P14 by Bae Systems with NSN 5962011895323 - Submit a Quote
Microcircuit Memory
Microcircuit Memory ASAP can help source this line with documentation review, alternate part checks, condition requirements, and account manager follow-up for urgent or planned procurement.
ASAP Aviation Procurement is pleased to announce that part number 311A7937P14 of NSN 5962011895323 is now available and in stock. We can get you one of the fastest and most competitive quotes on this part. Part number 311A7937P14 is a Microcircuit Memory manufactured by Bae Systems under CAGE Code . Simply fill out the Request for Quote (RFQ) form provided here to get started on your quote. In order to make sure that we get you your quote in a timely manner, please take the time to make sure that all fields are completely filled out, particularly the asterisk-marked (*) fields like Parts Needed By and Quantity (ea).
Technical sourcing notes
Operations-grade aviation sourcing.
Request a quote for 311A7937P14
Send this part to ASAP with quantity, need-by timing, and buyer contact details. An account manager will review availability, alternates, certificates, and delivery options.
Submit RFQ for 311A7937P14
Send this part to ASAP with quantity, need-by timing, and buyer contact details. A dedicated account manager reviews availability, alternates, certificates, and delivery options.
- Manufacturer
- Bae Systems Controls Inc
- CAGE
- 89954
NSN Information for Part Number 311A7937P14 with NSN 5962-01-189-5323, 5962011895323
Characteristics Data of NSN 5962-01-189-5323, 5962011895323
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 180 INCHES MINIMUM AND 1 220 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 580 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 080 INCHES MINIMUM AND 0 120 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | AGAV | END ITEM IDENTIFICATIONAF-18-DCN |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND WENABLE AND 3-STATE OUTPUT |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC50 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 50 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |