L537111183 by Lockheed Martin Librascope with NSN 5962012691021 - Submit a Quote
Microcircuit Memory
Microcircuit Memory ASAP can help source this line with documentation review, alternate part checks, condition requirements, and account manager follow-up for urgent or planned procurement.
ASAP Aviation Procurement is pleased to announce that part number L537111183 of NSN 5962012691021 is now available and in stock. We can get you one of the fastest and most competitive quotes on this part. Part number L537111183 is a Microcircuit Memory manufactured by Lockheed Martin Librascope under CAGE Code . Simply fill out the Request for Quote (RFQ) form provided here to get started on your quote. In order to make sure that we get you your quote in a timely manner, please take the time to make sure that all fields are completely filled out, particularly the asterisk-marked (*) fields like Parts Needed By and Quantity (ea).
Technical sourcing notes
Operations-grade aviation sourcing.
Request a quote for L537111183
Send this part to ASAP with quantity, need-by timing, and buyer contact details. An account manager will review availability, alternates, certificates, and delivery options.
Submit RFQ for L537111183
Send this part to ASAP with quantity, need-by timing, and buyer contact details. A dedicated account manager reviews availability, alternates, certificates, and delivery options.
- Manufacturer
- Dla Land And Maritime
- CAGE
- 16236
NSN Information for Part Number L537111183 with NSN 5962-01-269-1021, 5962012691021
Characteristics Data of NSN 5962-01-269-1021, 5962012691021
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.490 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND ULTRAVIOLET ERASABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 17 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 6.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
