810AS2508-3 by Raytheon Technical Services Comp with NSN 5962012530184 - Submit a Quote
Microcircuit Memory
Microcircuit Memory ASAP can help source this line with documentation review, alternate part checks, condition requirements, and account manager follow-up for urgent or planned procurement.
ASAP Aviation Procurement is pleased to announce that part number 810AS2508-3 of NSN 5962012530184 is now available and in stock. We can get you one of the fastest and most competitive quotes on this part. Part number 810AS2508-3 is a Microcircuit Memory manufactured by Raytheon Technical Services Comp under CAGE Code . Simply fill out the Request for Quote (RFQ) form provided here to get started on your quote. In order to make sure that we get you your quote in a timely manner, please take the time to make sure that all fields are completely filled out, particularly the asterisk-marked (*) fields like Parts Needed By and Quantity (ea).
Technical sourcing notes
Operations-grade aviation sourcing.
Request a quote for 810AS2508-3
Send this part to ASAP with quantity, need-by timing, and buyer contact details. An account manager will review availability, alternates, certificates, and delivery options.
Submit RFQ for 810AS2508-3
Send this part to ASAP with quantity, need-by timing, and buyer contact details. A dedicated account manager reviews availability, alternates, certificates, and delivery options.
- Manufacturer
- Raytheon Technical Services Comp
- CAGE
- 3B150
NSN Information for Part Number 810AS2508-3 with NSN 5962-01-253-0184, 5962012530184
Characteristics Data of NSN 5962-01-253-0184, 5962012530184
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 245 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 545 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 185 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING525 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-0 070 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0125 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDPROGRAMMABLE AND ULTRAVIOLET ERASABLE AND STATIC OPERATION |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMMETAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN13 INPUT |
| MEMORY | CRHL | BIT QUANTITY16384 |
| MEMORY | CSWJ | WORD QUANTITY2048 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
