ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers JANTXIN5551, IN5200, 3SM4, 10129866, 353-3296-000 under NSN 5961-00-416-4858 of Semiconductor Device Diode manufactured by Military Specifications, Semtech Corporation, Semcor Inc, Nimikkeistokeskus Ncb Finland, Rockwell Collins Aerospace.
Federal Supply Class of NSN 5961-00-416-4858 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
| Item Name | Semiconductor Device Diode |
| INC Code | 20589 |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-416-4858 (004164858) |
| NCB Code | USA (00) |
| Manufacturer | Military Specifications, Semtech Corporation, Semcor Inc, Nimikkeistokeskus Ncb Finland, Rockwell Collins Aerospace, Freescale Semiconductor Inc, General Semiconductor Inc, Diodes Zetex Semiconductors Limited, Science Applications International Corporation, Lockheed Martin Corporation, Gilbert Engineering Co Inc, Dynalec Corporation, Solitron Devices Inc, United States Department Of The Army, Northrop Grumman Systems Corporation, Inspektorat Wsparcia Sil Zbrojnych, General Dynamics Mission Systems, Raytheon Company, Safran Electrical And Power, Joint Army-Navy Specifications, Adelco Elektronik Gmbh, Department Of Defense Project, Lacon Electronic Gmbh, Westinghouse Electric Corp |
| Associated Parts Numbers of NSN 5961-00-416-4858 | ||||||
|---|---|---|---|---|---|---|
| Part Number | Manufacturer | Item Name | Cage Code | Type | Status | RFQ |
| JANTXIN5551 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| IN5200 | semtech corporation | semiconductor device diode | 14099 | A | A | RFQ |
| 3SM4 | semcor inc | semiconductor device diode | 28976 | F | A | RFQ |
| 10129866 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | H | A | RFQ |
| 353-3296-000 | rockwell collins aerospace | semiconductor device diode | 13499 | A | A | RFQ |
| 1N4142 | freescale semiconductor inc | semiconductor device diode | 04713 | A | A | RFQ |
| 1N5551 | general semiconductor inc | semiconductor device diode | 14936 | A | A | RFQ |
| 12448 34803 | diodes zetex semiconductors limited | semiconductor device diode | k1196 | E | A | RFQ |
| QPL-JANTX1N5551 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| 185-0040 | science applications international corporation | semiconductor device diode | 79343 | F | A | RFQ |
| 7904865-01 | lockheed martin corporation | semiconductor device diode | 90536 | A | A | RFQ |
| 1N3079 | gilbert engineering co inc | semiconductor device diode | 03877 | A | A | RFQ |
| 16100-011 | dynalec corporation | semiconductor device diode | 12763 | A | A | RFQ |
| CER300 | solitron devices inc | semiconductor device diode | 21845 | A | A | RFQ |
| JANTX1N5551 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| 7904865-03 | lockheed martin corporation | semiconductor device diode | 90536 | A | A | RFQ |
| 353-3296-00 | rockwell collins aerospace | semiconductor device diode | 13499 | A | A | RFQ |
| Z1442 | united states department of the army | semiconductor device diode | 12255 | F | A | RFQ |
| 1N5551 | semtech corporation | semiconductor device diode | 14099 | A | A | RFQ |
| 1978209FN4 | northrop grumman systems corporation | semiconductor device diode | 03956 | A | A | RFQ |
| JAN1N3190 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| 5961PL0190241 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | H | A | RFQ |
| 16101-052 | dynalec corporation | semiconductor device diode | 12763 | A | A | RFQ |
| MIL-S-19500/420 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| MIL-S-19500/155 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| 1N2613 | general dynamics mission systems | semiconductor device diode | 1vpw8 | F | A | RFQ |
| 16101-038 | dynalec corporation | semiconductor device diode | 12763 | A | A | RFQ |
| 4178600-565 | raytheon company | semiconductor device diode | 05869 | A | A | RFQ |
| 353-9009-391 | rockwell collins aerospace | semiconductor device diode | 13499 | A | A | RFQ |
| JANTX1N3190 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| 8-711113-079 | safran electrical and power | semiconductor device diode | f0217 | E | A | RFQ |
| 353-9019-020 | rockwell collins aerospace | semiconductor device diode | 95105 | A | A | RFQ |
| JAN1N5551 | joint army-navy specifications | semiconductor device diode | 81350 | NSN | Avl | RFQ |
| MIL-PRF-19500/420 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| JANTX1N5551A | adelco elektronik gmbh | semiconductor device diode | c7191 | E | R | RFQ |
| 76-11244 | department of defense project | semiconductor device diode | 30554 | A | A | RFQ |
| JAN1N5551 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| 3SE4 | semtech corporation | semiconductor device diode | 14099 | A | A | RFQ |
| JANTX1N5551A | lacon electronic gmbh | semiconductor device diode | d6528 | E | A | RFQ |
| 1N2613 | westinghouse electric corp | semiconductor device diode | 05277 | A | F | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.115 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| AGAV | END ITEM IDENTIFICATION | MULTIPLE LAUNCH ROCKET SYSTEM MLRS) |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 460.0 MINIMUM BREAKDOWN VOLTAGE,DC AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 5.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| Relevant Components for NSN - 5961-00-416-4858, 5961004164858 | ||||
| 5905-00-000-0136 (5905000000136) | 5905-00-001-2573 (5905000012573) | 5905-00-001-2812 (5905000012812) | 5905-00-001-2813 (5905000012813) | |
| 5905-00-001-2814 (5905000012814) | 5905-00-001-2815 (5905000012815) | 5905-00-001-2818 (5905000012818) | 5905-00-001-2819 (5905000012819) | |
| 5905-00-001-2821 (5905000012821) | 5905-00-001-2822 (5905000012822) | 5905-00-001-2826 (5905000012826) | 5905-00-001-2827 (5905000012827) | |
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AS9120B and ISO 9001:2015 |
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Aviation Suppliers Association Member |
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FAA AC 0056B Accredited |
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AS 6081:2012 Certification |
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ESD S20.20-2014 Certification |
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