ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 1N3600, VBE890-1N3600, 908705-1, 7900106-00, 4178600-341 under NSN 5961-00-702-3435 of Semiconductor Device Diode manufactured by Eck And Krebs Scientific Laboratory, Thales Nederland Bv, Raytheon Company, Lockheed Martin Corporation, Adelco Elektronik Gmbh.
Federal Supply Class of NSN 5961-00-702-3435 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
| Item Name | Semiconductor Device Diode |
| INC Code | 20589 |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 00-702-3435 (007023435) |
| NCB Code | USA (00) |
| Manufacturer | Eck And Krebs Scientific Laboratory, Thales Nederland Bv, Raytheon Company, Lockheed Martin Corporation, Adelco Elektronik Gmbh, Military Specifications, Fairchild Semiconductor Corp, Joint Army-Navy Specifications, Itt Telecom Products Corp, Litton Systems Inc, Inspektorat Wsparcia Sil Zbrojnych, Northern Telecom Systems Corp, Airbus Defence And Space Limited, Rockwell Collins Aerospace, Electronic Industries Inc, Computer Consoles Inc, Texas Instruments Inc, General Dynamics Mission Systems, Thales Communications Inc |
| Associated Parts Numbers of NSN 5961-00-702-3435 | ||||||
|---|---|---|---|---|---|---|
| Part Number | Manufacturer | Item Name | Cage Code | Type | Status | RFQ |
| 1N3600 | eck and krebs scientific laboratory | semiconductor device diode | 07623 | A | F | RFQ |
| VBE890-1N3600 | thales nederland bv | semiconductor device diode | h0203 | F | A | RFQ |
| 908705-1 | raytheon company | semiconductor device diode | 82577 | F | A | RFQ |
| 7900106-00 | lockheed martin corporation | semiconductor device diode | 90536 | A | A | RFQ |
| 4178600-341 | raytheon company | semiconductor device diode | 05869 | A | A | RFQ |
| JAN1N3600A | adelco elektronik gmbh | semiconductor device diode | c7191 | E | R | RFQ |
| SSNIN3600 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| FD6529 | fairchild semiconductor corp | semiconductor device diode | 13715 | A | F | RFQ |
| JAN1N3600 | joint army-navy specifications | semiconductor device diode | 81350 | NSN | Avl | RFQ |
| 106681 | itt telecom products corp | semiconductor device diode | 21340 | A | F | RFQ |
| 947099-6000 | litton systems inc | semiconductor device diode | 13973 | A | R | RFQ |
| 5961PL0808033 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | H | A | RFQ |
| USN1N3600 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| JAN1N3600 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| 752-6394 | northern telecom systems corp | semiconductor device diode | 62143 | A | F | RFQ |
| 5800583-926201.205 | airbus defence and space limited | semiconductor device diode | c0426 | E | A | RFQ |
| MIL-PRF-19500/231 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| 947179-6000 | litton systems inc | semiconductor device diode | 13973 | A | R | RFQ |
| 353-9008-011 | rockwell collins aerospace | semiconductor device diode | 13499 | A | A | RFQ |
| 1N3600A29 | electronic industries inc | semiconductor device diode | 80131 | NSN | Avl | RFQ |
| 107X00026 | computer consoles inc | semiconductor device diode | 14635 | A | F | RFQ |
| 352250010124 | thales nederland bv | semiconductor device diode | h0203 | F | A | RFQ |
| 1N3600 | joint army-navy specifications | semiconductor device diode | 81350 | NSN | Avl | RFQ |
| 947179-600 | litton systems inc | semiconductor device diode | 13973 | A | R | RFQ |
| 1N3600 | texas instruments inc | semiconductor device diode | 01295 | A | A | RFQ |
| 13E13600-003 | general dynamics mission systems | semiconductor device diode | 04655 | F | A | RFQ |
| 1N3600 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| 35584 | thales communications inc | semiconductor device diode | 23386 | A | A | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.056 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM BREAKDOWN VOLTAGE,DC AND 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 4.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/231 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-00-702-3435, 5961007023435 | ||||
| 5905-00-000-0136 (5905000000136) | 5905-00-001-2573 (5905000012573) | 5905-00-001-2812 (5905000012812) | 5905-00-001-2813 (5905000012813) | |
| 5905-00-001-2814 (5905000012814) | 5905-00-001-2815 (5905000012815) | 5905-00-001-2818 (5905000012818) | 5905-00-001-2819 (5905000012819) | |
| 5905-00-001-2821 (5905000012821) | 5905-00-001-2822 (5905000012822) | 5905-00-001-2826 (5905000012826) | 5905-00-001-2827 (5905000012827) | |
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AS9120B and ISO 9001:2015 |
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Aviation Suppliers Association Member |
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FAA AC 0056B Accredited |
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AS 6081:2012 Certification |
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ESD S20.20-2014 Certification |
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