ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 353-2974-001, S57-7952, 5E4820 51-1005, QPL-JAN1N747A, M24621 under NSN 5961-01-126-5349 of Semiconductor Device Diode manufactured by Freescale Semiconductor Inc, Miltope Corporation, Hamilton Sundstrand Corporation, Military Specifications, Rockwell Collins Aerospace.
Federal Supply Class of NSN 5961-01-126-5349 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
| Item Name | Semiconductor Device Diode |
| INC Code | 20589 |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-126-5349 (011265349) |
| NCB Code | USA (01) |
| Manufacturer | Freescale Semiconductor Inc, Miltope Corporation, Hamilton Sundstrand Corporation, Military Specifications, Rockwell Collins Aerospace, Lockheed Martin Corporation, Raytheon Company, Nimikkeistokeskus Ncb Finland, Bae Systems Inc, Datron The Instruments Inc, The Boeing Company, Texas Instruments Inc |
| Associated Parts Numbers of NSN 5961-01-126-5349 | ||||||
|---|---|---|---|---|---|---|
| Part Number | Manufacturer | Item Name | Cage Code | Type | Status | RFQ |
| 353-2974-001 | freescale semiconductor inc | semiconductor device diode | 04713 | A | A | RFQ |
| S57-7952 | miltope corporation | semiconductor device diode | 54418 | A | A | RFQ |
| 5E4820 51-1005 | hamilton sundstrand corporation | semiconductor device diode | 73030 | A | A | RFQ |
| QPL-JAN1N747A | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| 353-2974-001 | rockwell collins aerospace | semiconductor device diode | 95105 | A | A | RFQ |
| M24621 | freescale semiconductor inc | semiconductor device diode | 04713 | A | A | RFQ |
| MIL-S-19500/127 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| MIL-PRF-19500/127 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| JANTX1N747 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| 353-2974-002 | rockwell collins aerospace | semiconductor device diode | 13499 | A | A | RFQ |
| 4907923-04 | lockheed martin corporation | semiconductor device diode | 90536 | A | A | RFQ |
| 99250-106 | lockheed martin corporation | semiconductor device diode | 49671 | A | H | RFQ |
| JANTX1N747A-1 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| 507523-2 | raytheon company | semiconductor device diode | 96214 | A | A | RFQ |
| JAN1N747A1 | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| 10133279 | nimikkeistokeskus ncb finland | semiconductor device diode | a486g | H | A | RFQ |
| 7538002P008 | bae systems inc | semiconductor device diode | 94117 | A | A | RFQ |
| JAN1N747A | military specifications | semiconductor device diode | 81349 | NSN | Avl | RFQ |
| 353-8503-220 | rockwell collins aerospace | semiconductor device diode | 13499 | A | A | RFQ |
| 374-00079 | datron the instruments inc | semiconductor device diode | 13488 | A | F | RFQ |
| 1206449-2 | lockheed martin corporation | semiconductor device diode | 56232 | F | A | RFQ |
| 353-2702-000 | the boeing company | semiconductor device diode | 81205 | A | A | RFQ |
| 353-2974-001 | texas instruments inc | semiconductor device diode | 01295 | A | A | RFQ |
| G492096-611 | raytheon company | semiconductor device diode | 49956 | A | A | RFQ |
| 353-2974-000 | the boeing company | semiconductor device diode | 81205 | A | A | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| AGAV | END ITEM IDENTIFICATION | 1430-01-080-7100 18876 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.6 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 110.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-01-126-5349, 5961011265349 | ||||
| 5905-00-000-0136 (5905000000136) | 5905-00-001-2573 (5905000012573) | 5905-00-001-2812 (5905000012812) | 5905-00-001-2813 (5905000012813) | |
| 5905-00-001-2814 (5905000012814) | 5905-00-001-2815 (5905000012815) | 5905-00-001-2818 (5905000012818) | 5905-00-001-2819 (5905000012819) | |
| 5905-00-001-2821 (5905000012821) | 5905-00-001-2822 (5905000012822) | 5905-00-001-2826 (5905000012826) | 5905-00-001-2827 (5905000012827) | |
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AS9120B and ISO 9001:2015 |
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Aviation Suppliers Association Member |
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FAA AC 0056B Accredited |
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AS 6081:2012 Certification |
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ESD S20.20-2014 Certification |
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