NSN 5961-00-026-9661 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961000269661 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 000269661 |
| NCB Code: USA (00) |
| Manufacturers: Adelco Elektronik Gmbh , Bae Systems , General Semiconductor Inc , Meggitt Aircraft Braking Systems , Indra Espacio Sa , Inspektorat Wsparcia Sil Zbrojnych , Rockwell Collins Inc , Cole Hersee Company , Semtech Corporation , Micro Uspd Inc , Microsemi Corporation , Rsm Electron Power Inc , Circor Aerospace Inc , Paeaeesikunta Logistiikkaosasto , General Dynamics Land Systems |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers JANTX1N5622A, JANTX1N5622, JAN1N5622, DSR12106-1005, D00001N5622D1 under NSN 5961-00-026-9661 of Semiconductor Device Diode manufactured by Adelco Elektronik Gmbh, Bae Systems, General Semiconductor Inc, Meggitt Aircraft Braking Systems, Indra Espacio Sa.
Federal Supply Class of NSN 5961-00-026-9661 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-026-9661, 5961000269661
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Part No Manufacturer Item Name QTY RFQ JANTX1N5622A Adelco Elektronik Gmbh semiconductor device diode Avl RFQ JANTX1N5622 Bae Systems semiconductor device diode Avl RFQ JAN1N5622 General Semiconductor Inc semiconductor device diode Avl RFQ DSR12106-1005 Meggitt Aircraft Braking Systems semiconductor device diode Avl RFQ D00001N5622D1 Indra Espacio Sa semiconductor device diode Avl RFQ 5961PL1332315 Inspektorat Wsparcia Sil Zbrojnych semiconductor device diode Avl RFQ 353-9019-100 Rockwell Collins Inc semiconductor device diode Avl RFQ 353-9009-592 Rockwell Collins Inc semiconductor device diode Avl RFQ 353-9009-592 Cole Hersee Company semiconductor device diode Avl RFQ 353-9009-591 General Semiconductor Inc semiconductor device diode Avl RFQ 353-9009-591 Semtech Corporation semiconductor device diode Avl RFQ 353-9009-591 Micro Uspd Inc semiconductor device diode Avl RFQ 353-9009-591 Microsemi Corporation semiconductor device diode Avl RFQ 353-9009-591 Rockwell Collins Inc semiconductor device diode Avl RFQ 353-9009-591 Rsm Electron Power Inc semiconductor device diode Avl RFQ 2330-0307 Circor Aerospace Inc semiconductor device diode Avl RFQ 10203045 Paeaeesikunta Logistiikkaosasto semiconductor device diode Avl RFQ 015961 General Dynamics Land Systems semiconductor device diode Avl RFQ 015961 Bae Systems semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961000269661MRC Criteria Characteristic CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 1000.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE SR-1 MANUFACTURERS CODE 81349 CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS JUNCTION SR-1 SPEC/STD CONTROLLING DATA ABHP OVERALL LENGTH 0.130 INCHES MINIMUM AND 0.225 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CTMZ SEMICONDUCTOR MATERIAL SILICON CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE ABBH INCLOSURE MATERIAL GLASS TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD SR-1 NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE MIL-PRF-19500/427 CTQX CURRENT RATING PER CHARACTERISTIC 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT SR-1 DEFINITIVE GOVERNMENT SPEC/STD REFERENCE JANTX1N5622 ADAV OVERALL DIAMETER 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM AND 1.250 INCHES MAXIMUM
| MRC | Criteria | Characteristic |
|---|---|---|
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1000.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| SR-1 | MANUFACTURERS CODE | 81349 |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| SR-1 | SPEC/STD CONTROLLING DATA | |
| ABHP | OVERALL LENGTH | 0.130 INCHES MINIMUM AND 0.225 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| ABBH | INCLOSURE MATERIAL | GLASS |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| SR-1 | NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE | MIL-PRF-19500/427 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
| SR-1 | DEFINITIVE GOVERNMENT SPEC/STD REFERENCE | JANTX1N5622 |
| ADAV | OVERALL DIAMETER | 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.250 INCHES MAXIMUM |