NSN 5961-00-103-7417 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961001037417 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 001037417 |
| NCB Code: USA (00) |
| Manufacturers: Rohde And Schwarz Inc , L 3 Communications , Raytheon Technical Services Company , Adelco Elektronik Gmbh , Microsemi Corporation , Lacon Electronic Gmbh , Freescale Semiconductor Inc , Gilbert Engineering Co Inc Incon , Honeywell International Inc , Data Device Corporation |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers GEE25320E6-2, AE0122278, 861647, 1N823A, 1N823 under NSN 5961-00-103-7417 of Semiconductor Device Diode manufactured by Rohde And Schwarz Inc, L 3 Communications, Raytheon Technical Services Company, Adelco Elektronik Gmbh, Microsemi Corporation.
Federal Supply Class of NSN 5961-00-103-7417 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-103-7417, 5961001037417
-
Part No Manufacturer Item Name QTY RFQ GEE25320E6-2 Rohde And Schwarz Inc semiconductor device diode Avl RFQ AE0122278 Rohde And Schwarz Inc semiconductor device diode Avl RFQ 861647 L 3 Communications semiconductor device diode Avl RFQ 861647 Raytheon Technical Services Company semiconductor device diode Avl RFQ 1N823A Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N823 Microsemi Corporation semiconductor device diode Avl RFQ 1N823 Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N823 Lacon Electronic Gmbh semiconductor device diode Avl RFQ 1N823 Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N823 Gilbert Engineering Co Inc Incon semiconductor device diode Avl RFQ 1834220-19 Honeywell International Inc semiconductor device diode Avl RFQ 1834220-19 L 3 Communications semiconductor device diode Avl RFQ 101000313 Data Device Corporation semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961001037417MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.265 INCHES NOMINAL ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.096 INCHES NOMINAL AFZC FUNCTION FOR WHICH DESIGNED ZENER DIODE AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE CTQS VOLTAGE TOLERANCE IN PERCENT -5.0 TO 5.0 CTQX CURRENT RATING PER CHARACTERISTIC 7.50 MILLIAMPERES ALL PRIMARIES HORSEPOWER METRIC CTRD POWER RATING PER CHARACTERISTIC 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 125.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.265 INCHES NOMINAL |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.096 INCHES NOMINAL |
| AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 7.50 MILLIAMPERES ALL PRIMARIES HORSEPOWER METRIC |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |