NSN 5961-00-105-8867 of Transistor - Parts Details
| Alternative NSN: 5961001058867 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 001058867 |
| NCB Code: USA (00) |
| Manufacturers: On Semiconductors , Freescale Semiconductor Inc , Texas Instrument Inc , National Semiconductor Corp , Intersil Corporation , Siliconix Incorporated Div Silic , Eveready Battery Co Inc , Solitron Devices Inc , Union Carbide Corp , Inspektorat Wsparcia Sil Zbrojnych , Hewlett Packard Co , Agilent Technologies Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SFE793, SFB9637, SF51145, ITS3134, FN1962 under NSN 5961-00-105-8867 of Transistor manufactured by On Semiconductors, Freescale Semiconductor Inc, Texas Instrument Inc, National Semiconductor Corp, Intersil Corporation.
Federal Supply Class of NSN 5961-00-105-8867 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-105-8867, 5961001058867
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Part No Manufacturer Item Name QTY RFQ SFE793 On Semiconductors transistor Avl RFQ SFE793 Freescale Semiconductor Inc transistor Avl RFQ SFB9637 Texas Instrument Inc transistor Avl RFQ SF51145 National Semiconductor Corp transistor Avl RFQ ITS3134 Intersil Corporation transistor Avl RFQ FN1962 Siliconix Incorporated Div Silic transistor Avl RFQ F1151 Eveready Battery Co Inc transistor Avl RFQ F1151 Solitron Devices Inc transistor Avl RFQ F1151 Union Carbide Corp transistor Avl RFQ 5961PL1336072 Inspektorat Wsparcia Sil Zbrojnych transistor Avl RFQ 1855-0020 Hewlett Packard Co transistor Avl RFQ 1855-0020 Agilent Technologies Inc transistor Avl RFQ
Characteristics Data of NSN 5961001058867MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.188 INCHES NOMINAL ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.220 INCHES NOMINAL ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.170 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 10.0 MAXIMUM GATE TO SOURCE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 500.00 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE CTRD POWER RATING PER CHARACTERISTIC 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.188 INCHES NOMINAL |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.220 INCHES NOMINAL |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.170 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 10.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |