NSN 5961-00-107-2678 of Transistor - Parts Details
| Alternative NSN: 5961001072678 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 001072678 |
| NCB Code: USA (00) |
| Manufacturers: Eads Deutschland Gmbh Verteidig , Freescale Semiconductor Inc , Electronic Industries Association , L 3 Communications , Whittaker Corp Whittaker Electro , Elettronica Gmbh , Itt Cannon , C Cor Electronics Inc , Rockwell Collins Inc , Adelco Elektronik Gmbh , Intersil Corporation , Siliconix Incorporated Div Silic , Union Carbide Corp , Solitron Devices Inc , National Semiconductor Corp , British Sarozal Ltd , Thales Uk Limited , Raytheon Electronic Systems Inc , Hewlett Packard Co , Paeaeesikunta Logistiikkaosasto |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers W41294B6200B2, SFE265U1, RELEASE5383, 855810, 847102-0062 under NSN 5961-00-107-2678 of Transistor manufactured by Eads Deutschland Gmbh Verteidig, Freescale Semiconductor Inc, Electronic Industries Association, L 3 Communications, Whittaker Corp Whittaker Electro.
Federal Supply Class of NSN 5961-00-107-2678 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-107-2678, 5961001072678
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Part No Manufacturer Item Name QTY RFQ W41294B6200B2 Eads Deutschland Gmbh Verteidig transistor Avl RFQ SFE265U1 Freescale Semiconductor Inc transistor Avl RFQ RELEASE5383 Electronic Industries Association transistor Avl RFQ 855810 L 3 Communications transistor Avl RFQ 847102-0062 Electronic Industries Association transistor Avl RFQ 81837-1 Whittaker Corp Whittaker Electro transistor Avl RFQ 531-331-002 Elettronica Gmbh transistor Avl RFQ 511797-1 Itt Cannon transistor Avl RFQ 353739 L 3 Communications transistor Avl RFQ 3528 C Cor Electronics Inc transistor Avl RFQ 352-0756-010 Rockwell Collins Inc transistor Avl RFQ 2N4416A Adelco Elektronik Gmbh transistor Avl RFQ 2N4416 Intersil Corporation transistor Avl RFQ 2N4416 Electronic Industries Association transistor Avl RFQ 2N4416 Freescale Semiconductor Inc transistor Avl RFQ 2N4416 Siliconix Incorporated Div Silic transistor Avl RFQ 2N4416 Union Carbide Corp transistor Avl RFQ 2N4416 Solitron Devices Inc transistor Avl RFQ 2N4416 National Semiconductor Corp transistor Avl RFQ 2N4416 British Sarozal Ltd transistor Avl RFQ 2N4416 Adelco Elektronik Gmbh transistor Avl RFQ 21-6000 Thales Uk Limited transistor Avl RFQ 20-00400-001 Raytheon Electronic Systems Inc transistor Avl RFQ 1855-0327 Hewlett Packard Co transistor Avl RFQ 10133039 Paeaeesikunta Logistiikkaosasto transistor Avl RFQ
Characteristics Data of NSN 5961001072678MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.210 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.230 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE CTQX CURRENT RATING PER CHARACTERISTIC 10.00 MILLIAMPERES MAXIMUM GATE CURRENT CTRD POWER RATING PER CHARACTERISTIC 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION TTQY TERMINAL TYPE AND QUANTITY 4 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM GATE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |