NSN 5961-00-116-6582 of Transistor - Parts Details
| Alternative NSN: 5961001166582 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 001166582 |
| NCB Code: USA (00) |
| Manufacturers: Rockwell Collins Inc , Adelco Elektronik Gmbh , Solitron Devices Inc , Lacon Electronic Gmbh |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 352-0756-030, 2N4417A, 2N4417 under NSN 5961-00-116-6582 of Transistor manufactured by Rockwell Collins Inc, Adelco Elektronik Gmbh, Solitron Devices Inc, Lacon Electronic Gmbh.
Federal Supply Class of NSN 5961-00-116-6582 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-116-6582, 5961001166582
Characteristics Data of NSN 5961001166582MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.078 INCHES NOMINAL ABJT TERMINAL LENGTH 0.158 INCHES NOMINAL ADAV OVERALL DIAMETER 0.138 INCHES NOMINAL ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 10.00 MILLIAMPERES MAXIMUM GATE CURRENT CTRD POWER RATING PER CHARACTERISTIC 175.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.078 INCHES NOMINAL |
| ABJT | TERMINAL LENGTH | 0.158 INCHES NOMINAL |
| ADAV | OVERALL DIAMETER | 0.138 INCHES NOMINAL |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM GATE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 175.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |