NSN 5961-00-116-8950 of Transistor - Parts Details
| Alternative NSN: 5961001168950 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 001168950 |
| NCB Code: USA (00) |
| Manufacturers: Eads Deutschland Gmbh Verteidig , Epcos Ag , Epcos Ag Abt Pr Roe K Pm , Intersil Corporation , Rockwell Collins Inc , Adelco Elektronik Gmbh , Lacon Electronic Gmbh |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers W41294B6000A4, Q62702D41F14, 5L5512-203-09, 39015, 352-0825-020 under NSN 5961-00-116-8950 of Transistor manufactured by Eads Deutschland Gmbh Verteidig, Epcos Ag, Epcos Ag Abt Pr Roe K Pm, Intersil Corporation, Rockwell Collins Inc.
Federal Supply Class of NSN 5961-00-116-8950 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-116-8950, 5961001168950
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Part No Manufacturer Item Name QTY RFQ W41294B6000A4 Eads Deutschland Gmbh Verteidig transistor Avl RFQ Q62702D41F14 Epcos Ag transistor Avl RFQ Q62702D41F14 Epcos Ag Abt Pr Roe K Pm transistor Avl RFQ 5L5512-203-09 Eads Deutschland Gmbh Verteidig transistor Avl RFQ 39015 Intersil Corporation transistor Avl RFQ 352-0825-020 Rockwell Collins Inc transistor Avl RFQ 2N3439A Adelco Elektronik Gmbh transistor Avl RFQ 2N3439 Adelco Elektronik Gmbh transistor Avl RFQ 2N3439 Intersil Corporation transistor Avl RFQ 2N3439 Lacon Electronic Gmbh transistor Avl RFQ
Characteristics Data of NSN 5961001168950MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.260 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.370 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION JUNCTION CONTACT AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 450.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN CTRD POWER RATING PER CHARACTERISTIC 1.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM FEAT SPECIAL FEATURES JUNCTION PATTERN ARRANGEMENT: NPN TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 450.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 350.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |