NSN 5961-00-127-4008 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961001274008 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 001274008 |
| NCB Code: USA (00) |
| Manufacturers: Nokia Siemens Networks Gmbh And Co , Epcos Ag , Epcos Ag Abt Pr Roe K Pm , Eca Etablissement Central Des , Adelco Elektronik Gmbh , Lacon Electronic Gmbh , N A P Smd Technology Inc , Freescale Semiconductor Inc , Honeywell International Inc , Honeywell Intl Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers V22916-X1-A137, Q62702-Z599-F82, 5961001274008, 1N829A, 1N829 under NSN 5961-00-127-4008 of Semiconductor Device Diode manufactured by Nokia Siemens Networks Gmbh And Co, Epcos Ag, Epcos Ag Abt Pr Roe K Pm, Eca Etablissement Central Des, Adelco Elektronik Gmbh.
Federal Supply Class of NSN 5961-00-127-4008 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-127-4008, 5961001274008
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Part No Manufacturer Item Name QTY RFQ V22916-X1-A137 Nokia Siemens Networks Gmbh And Co semiconductor device diode Avl RFQ Q62702-Z599-F82 Epcos Ag semiconductordevicediode Avl RFQ Q62702-Z599-F82 Epcos Ag Abt Pr Roe K Pm semiconductor device diode Avl RFQ 5961001274008 Eca Etablissement Central Des semiconductor device diode Avl RFQ 1N829A Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N829 Lacon Electronic Gmbh semiconductor device diode Avl RFQ 1N829 N A P Smd Technology Inc semiconductor device diode Avl RFQ 1N829 Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N829 Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1834220-23 Honeywell International Inc semiconductor device diode Avl RFQ 1834220-23 Honeywell Intl Inc semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961001274008MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.300 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.130 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 6.5 MAXIMUM BREAKDOWN VOLTAGE, DC CTQX CURRENT RATING PER CHARACTERISTIC 35.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT NOMINAL CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 100.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.130 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.5 MAXIMUM BREAKDOWN VOLTAGE, DC |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 35.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT NOMINAL |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |