NSN 5961-00-130-0492 of Semiconductor Device Diode - Parts Details
Alternative NSN: 5961001300492 |
Item Name: Semiconductor Device Diode |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 001300492 |
NCB Code: USA (00) |
Manufacturers: Elettronica Gmbh , Rockwell Collins Inc , Adelco Elektronik Gmbh , General Semiconductor Inc , Telcom Semiconductor Inc , Texas Instrument Inc , Trw Electronic Components Division , Freescale Semiconductor Inc , Lacon Electronic Gmbh , Microsemi Corporation , Motorola Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 521-024-030, 353-3177-00, 1N966BA, 1N966B under NSN 5961-00-130-0492 of Semiconductor Device Diode manufactured by Elettronica Gmbh, Rockwell Collins Inc, Adelco Elektronik Gmbh, General Semiconductor Inc, Telcom Semiconductor Inc.
Federal Supply Class of NSN 5961-00-130-0492 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-130-0492, 5961001300492
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Part No Manufacturer Item Name QTY RFQ 521-024-030 Elettronica Gmbh semiconductor device diode Avl RFQ 353-3177-00 Rockwell Collins Inc semiconductor device diode Avl RFQ 1N966BA Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N966B General Semiconductor Inc semiconductor device diode Avl RFQ 1N966B Telcom Semiconductor Inc semiconductor device diode Avl RFQ 1N966B Texas Instrument Inc semiconductor device diode Avl RFQ 1N966B Adelco Elektronik Gmbh semiconductor device diode Avl RFQ 1N966B Trw Electronic Components Division semiconductor device diode Avl RFQ 1N966B Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N966B Lacon Electronic Gmbh semiconductor device diode Avl RFQ 1N966B Microsemi Corporation semiconductor device diode Avl RFQ 1N966B Motorola Inc semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961001300492MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.104 INCHES NOMINAL AFZC FUNCTION FOR WHICH DESIGNED ZENER DIODE ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION DO-35 AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 16.0 NOMINAL NOMINAL REGULATOR VOLTAGE CTQS VOLTAGE TOLERANCE IN PERCENT -5.0/+5.0 CTQX CURRENT RATING PER CHARACTERISTIC 7.80 MILLIAMPERES ALL PRIMARIES HORSEPOWER METRIC CTRD POWER RATING PER CHARACTERISTIC 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | GLASS |
ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.104 INCHES NOMINAL |
AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 16.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0/+5.0 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 7.80 MILLIAMPERES ALL PRIMARIES HORSEPOWER METRIC |
CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |