NSN 5961-00-133-0368 of Transistor - Parts Details
| Alternative NSN: 5961001330368 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 001330368 |
| NCB Code: USA (00) |
| Manufacturers: Electronic Industries Association , Intersil Corporation , National Semiconductor Corp , Solitron Devices Inc , Fairchild Semiconductor Corp , Honeywell International Inc , Gap Instrument Corp , Advanced Logic Resources Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers EIA RELEASE 5349, 2N4381, 2504994-2, 016-1D910-1 under NSN 5961-00-133-0368 of Transistor manufactured by Electronic Industries Association, Intersil Corporation, National Semiconductor Corp, Solitron Devices Inc, Fairchild Semiconductor Corp.
Federal Supply Class of NSN 5961-00-133-0368 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-133-0368, 5961001330368
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Part No Manufacturer Item Name QTY RFQ EIA RELEASE 5349 Electronic Industries Association transistor Avl RFQ 2N4381 Intersil Corporation transistor Avl RFQ 2N4381 Electronic Industries Association transistor Avl RFQ 2N4381 National Semiconductor Corp transistor Avl RFQ 2N4381 Solitron Devices Inc transistor Avl RFQ 2N4381 Fairchild Semiconductor Corp transistor Avl RFQ 2504994-2 Honeywell International Inc transistor Avl RFQ 016-1D910-1 Gap Instrument Corp transistor Avl RFQ 016-1D910-1 Advanced Logic Resources Inc transistor Avl RFQ
Characteristics Data of NSN 5961001330368MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.188 INCHES NOMINAL ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.220 INCHES NOMINAL ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOU CTRD POWER RATING PER CHARACTERISTIC 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.188 INCHES NOMINAL |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.220 INCHES NOMINAL |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOU |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |