NSN 5961-00-150-0823 of Transistor - Parts Details
| Alternative NSN: 5961001500823 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 001500823 |
| NCB Code: USA (00) |
| Manufacturers: Raytheon Aircraft , Lacon Electronic Gmbh , Adelco Elektronik Gmbh , Freescale Semiconductor Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 537680-1, 2N3055A, 2N3055 under NSN 5961-00-150-0823 of Transistor manufactured by Raytheon Aircraft, Lacon Electronic Gmbh, Adelco Elektronik Gmbh, Freescale Semiconductor Inc.
Federal Supply Class of NSN 5961-00-150-0823 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-150-0823, 5961001500823
Characteristics Data of NSN 5961001500823MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM ADAV OVERALL DIAMETER 0.875 INCHES MAXIMUM AKPV MOUNTING FACILITY QUANTITY 2 ALAS INTERNAL CONFIGURATION JUNCTION CONTACT ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR ASCQ INTERNAL JUNCTION CONFIGURATION NPN AXGY MOUNTING METHOD UNTHREADED HOLE CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 7.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM CTRD POWER RATING PER CHARACTERISTIC 115.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD AND 1 CASE
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.875 INCHES MAXIMUM |
| AKPV | MOUNTING FACILITY QUANTITY | 2 |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | NPN |
| AXGY | MOUNTING METHOD | UNTHREADED HOLE |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 7.00 AMPERES MAXIMUM BASE CURRENT, DC AND 15.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 115.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |