NSN 5961-00-190-6087 of Transistor - Parts Details
| Alternative NSN: 5961001906087 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 001906087 |
| NCB Code: USA (00) |
| Manufacturers: Solitron Devices Inc , Siliconix Incorporated Div Silic , Rockwell Collins Inc , Telcom Semiconductor Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 352-0605-011, 2N2608 under NSN 5961-00-190-6087 of Transistor manufactured by Solitron Devices Inc, Siliconix Incorporated Div Silic, Rockwell Collins Inc, Telcom Semiconductor Inc.
Federal Supply Class of NSN 5961-00-190-6087 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-190-6087, 5961001906087
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Part No Manufacturer Item Name QTY RFQ 352-0605-011 Solitron Devices Inc transistor Avl RFQ 352-0605-011 Siliconix Incorporated Div Silic transistor Avl RFQ 352-0605-011 Rockwell Collins Inc transistor Avl RFQ 352-0605-011 Telcom Semiconductor Inc transistor Avl RFQ 2N2608 Siliconix Incorporated Div Silic transistor Avl RFQ 2N2608 Solitron Devices Inc transistor Avl RFQ 2N2608 Telcom Semiconductor Inc transistor Avl RFQ
Characteristics Data of NSN 5961001906087MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.190 INCHES NOMINAL ABJT TERMINAL LENGTH 1.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.219 INCHES NOMINAL ALAS INTERNAL CONFIGURATION FIELD EFFECT ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 30.0 MAXIMUM GATE TO SOURCE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 4.50 MICROAMPERES MAXIMUM DRAIN CURRENT AND 10.00 MICROAMPERES MAXIMUM GATE CURRENT CTRD POWER RATING PER CHARACTERISTIC 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.190 INCHES NOMINAL |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.219 INCHES NOMINAL |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 4.50 MICROAMPERES MAXIMUM DRAIN CURRENT AND 10.00 MICROAMPERES MAXIMUM GATE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |