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NSN 5961-00-252-1066 of Semiconductor Device Thyristor - Parts Details

Alternative NSN: 5961002521066
Item Name: Semiconductor Device Thyristor
FSG: 59 Electrical and Electronic Equipment Components
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware
NIIN: 002521066
NCB Code: USA (00)
Manufacturers: Gilbert Engineering Co Inc Incon , General Electric Company , Kearfott Corp , Micro Uspd Inc , N A P Smd Technology Inc

ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TSD198, C5BR1200, C531000514, 2N2326 under NSN 5961-00-252-1066 of Semiconductor Device Thyristor manufactured by Gilbert Engineering Co Inc Incon, General Electric Company, Kearfott Corp, Micro Uspd Inc, N A P Smd Technology Inc.

Federal Supply Class of NSN 5961-00-252-1066 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.

Part Number's List for NSN 5961-00-252-1066, 5961002521066

  • Part No Manufacturer Item Name QTY RFQ
    TSD198 Gilbert Engineering Co Inc Incon semiconductor device thyristor Avl
    RFQ
    C5BR1200 General Electric Company semiconductor device thyristor Avl
    RFQ
    C531000514 Kearfott Corp semiconductor device thyristor Avl
    RFQ
    2N2326 Gilbert Engineering Co Inc Incon semiconductor device thyristor Avl
    RFQ
    2N2326 Micro Uspd Inc semiconductor device thyristor Avl
    RFQ
    2N2326 N A P Smd Technology Inc semiconductor device thyristor Avl
    RFQ

Characteristics Data of NSN 5961002521066

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALGLASS AND METAL
ABHPOVERALL LENGTH0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
ABJTTERMINAL LENGTH1.500 INCHES MINIMUM
ADAVOVERALL DIAMETER0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
ALASINTERNAL CONFIGURATIONJUNCTION CONTACT
ALBAELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASEANODE
AXGYMOUNTING METHODTERMINAL
AYQSTERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
CTMZIII SEMICONDUCTOR MATERIALSILICON
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC200.0 MAXIMUM BREAKOVER VOLTAGE, DC
CTQXCURRENT RATING PER CHARACTERISTIC15.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE
CTRDPOWER RATING PER CHARACTERISTIC10.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR BLANK
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT125.0 DEG CELSIUS CASE
FEATSPECIAL FEATURESINTERNAL JUNCTION CONFIGURATION ARRANGEMENT PNPN
TESTTEST DATA DOCUMENT88818-C531000514 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING D
TTQYTERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD

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