NSN 5961-00-400-5973 of Transistor - Parts Details
Alternative NSN: 5961004005973 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 004005973 |
NCB Code: USA (00) |
Manufacturers: Electronic Industries Association , Butler National Corp , Bastogi Sistemi Spa , Selex Communications Gmbh , Micro Uspd Inc , On Semiconductors , Fairchild Semiconductor Corp , Solid State Devices Inc , Freescale Semiconductor Inc , Gilbert Engineering Co Inc Incon , Agilent Technologies Inc , Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems , Hewlett Packard Co , Unison Industries Llc , Thales Communications Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers RELEASE5362, B106032-0000, 4-25251P, 2N4239, 1854-0361 under NSN 5961-00-400-5973 of Transistor manufactured by Electronic Industries Association, Butler National Corp, Bastogi Sistemi Spa, Selex Communications Gmbh, Micro Uspd Inc.
Federal Supply Class of NSN 5961-00-400-5973 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-400-5973, 5961004005973
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Part No Manufacturer Item Name QTY RFQ RELEASE5362 Electronic Industries Association transistor Avl RFQ B106032-0000 Butler National Corp transistor Avl RFQ 4-25251P Bastogi Sistemi Spa transistor Avl RFQ 4-25251P Selex Communications Gmbh transistor Avl RFQ 2N4239 Micro Uspd Inc transistor Avl RFQ 2N4239 On Semiconductors transistor Avl RFQ 2N4239 Electronic Industries Association transistor Avl RFQ 2N4239 Fairchild Semiconductor Corp transistor Avl RFQ 2N4239 Solid State Devices Inc transistor Avl RFQ 2N4239 Freescale Semiconductor Inc transistor Avl RFQ 2N4239 Gilbert Engineering Co Inc Incon transistor Avl RFQ 1854-0361 Agilent Technologies Inc transistor Avl RFQ 1854-0361 Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems transistor Avl RFQ 1854-0361 Hewlett Packard Co transistor Avl RFQ 123623 Unison Industries Llc transistor Avl RFQ 106032-000000 Butler National Corp transistor Avl RFQ 048797-0001 Thales Communications Inc transistor Avl RFQ
Characteristics Data of NSN 5961004005973MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.250 INCHES NOMINAL ABJT TERMINAL LENGTH 1.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.360 INCHES NOMINAL ALAS INTERNAL CONFIGURATION JUNCTION CONTACT ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.200 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN CTQX CURRENT RATING PER CHARACTERISTIC 1.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM CTRD POWER RATING PER CHARACTERISTIC 800.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION FEAT SPECIAL FEATURES JUNCTION PATTERN ARRANGEMENT: NPN TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 80131-RELEASE5362 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.250 INCHES NOMINAL |
ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.360 INCHES NOMINAL |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM |
CTRD | POWER RATING PER CHARACTERISTIC | 800.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE5362 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |