NSN 5961-00-403-3972 of Transistor - Parts Details
| Alternative NSN: 5961004033972 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 004033972 |
| NCB Code: USA (00) |
| Manufacturers: Telcom Semiconductor Inc , Siliconix Incorporated Div Silic , Minnesota Mining And Mfg Co , 3m Company , Wavetek Rockland Inc Division |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers U1897JF, U1897E, 83-1530-2386, 81-1530-2386-2, 230035 under NSN 5961-00-403-3972 of Transistor manufactured by Telcom Semiconductor Inc, Siliconix Incorporated Div Silic, Minnesota Mining And Mfg Co, 3m Company, Wavetek Rockland Inc Division.
Federal Supply Class of NSN 5961-00-403-3972 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-403-3972, 5961004033972
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Part No Manufacturer Item Name QTY RFQ U1897JF Telcom Semiconductor Inc transistor Avl RFQ U1897JF Siliconix Incorporated Div Silic transistor Avl RFQ U1897E Telcom Semiconductor Inc transistor Avl RFQ 83-1530-2386 Minnesota Mining And Mfg Co transistor Avl RFQ 81-1530-2386-2 3m Company transistor Avl RFQ 230035 Wavetek Rockland Inc Division transistor Avl RFQ
Characteristics Data of NSN 5961004033972MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.200 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.210 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOU CTQX CURRENT RATING PER CHARACTERISTIC 40.00 AMPERES MAXIMUM DRAIN CURRENT CTRD POWER RATING PER CHARACTERISTIC 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 125.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.210 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOU |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 40.00 AMPERES MAXIMUM DRAIN CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |