NSN 5961-00-407-2370 of Transistor - Parts Details
| Alternative NSN: 5961004072370 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 004072370 |
| NCB Code: USA (00) |
| Manufacturers: Siliconix Incorporated Div Silic , Texas Instrument Inc , Dla Land And Maritime , Agilent Technologies Inc , Hewlett Packard Co |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SU941, SFB3999, DMS 83053B, 1855-0025-1, 1855-0025 under NSN 5961-00-407-2370 of Transistor manufactured by Siliconix Incorporated Div Silic, Texas Instrument Inc, Dla Land And Maritime, Agilent Technologies Inc, Hewlett Packard Co.
Federal Supply Class of NSN 5961-00-407-2370 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-407-2370, 5961004072370
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Part No Manufacturer Item Name QTY RFQ SU941 Siliconix Incorporated Div Silic transistor Avl RFQ SFB3999 Texas Instrument Inc transistor Avl RFQ DMS 83053B Dla Land And Maritime transistor Avl RFQ 1855-0025-1 Agilent Technologies Inc transistor Avl RFQ 1855-0025-1 Hewlett Packard Co transistor Avl RFQ 1855-0025 Agilent Technologies Inc transistor Avl RFQ 1855-0025 Hewlett Packard Co transistor Avl RFQ
Characteristics Data of NSN 5961004072370MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.210 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.230 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE GATE AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 6.0 MAXIMUM GATE TO SOURCE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 10.00 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE CTRD POWER RATING PER CHARACTERISTIC 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 6.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |