NSN 5961-00-421-3002 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961004213002 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 004213002 |
| NCB Code: USA (00) |
| Manufacturers: Semicon Components Inc , Adelco Elektronik Gmbh , Semtech Corporation , Thales Communications Inc , Inspektorat Wsparcia Sil Zbrojnych , Raytheon Aircraft , Tlt Babcock Inc , Hamilton Sundstrand Corporation , Honeywell Regelsysteme Gmbh Gesc , Rockwell Collins Inc , Interstate Electronics Corporation , Qes Ltd Quality Electronic Services , Selex Galileo Ltd , Honeywell International Inc , Dare Electronics Inc , Bae Systems , Honeywell Intl Inc , Rolls Royce Corp , Te Connectivity |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SM110, S3A1, JAN1N5550A, J1N5550, 848172-0001 under NSN 5961-00-421-3002 of Semiconductor Device Diode manufactured by Semicon Components Inc, Adelco Elektronik Gmbh, Semtech Corporation, Thales Communications Inc, Inspektorat Wsparcia Sil Zbrojnych.
Federal Supply Class of NSN 5961-00-421-3002 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-421-3002, 5961004213002
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Part No Manufacturer Item Name QTY RFQ SM110 Semicon Components Inc semiconductor device diode Avl RFQ S3A1 Semicon Components Inc semiconductor device diode Avl RFQ JAN1N5550A Adelco Elektronik Gmbh semiconductor device diode Avl RFQ J1N5550 Semtech Corporation semiconductor device diode Avl RFQ 848172-0001 Thales Communications Inc semiconductor device diode Avl RFQ 5961PL0934423 Inspektorat Wsparcia Sil Zbrojnych semiconductor device diode Avl RFQ 538098-1 Raytheon Aircraft semiconductor device diode Avl RFQ 5218-677 Raytheon Aircraft semiconductor device diode Avl RFQ 50-464-020 Tlt Babcock Inc semiconductor device diode Avl RFQ 4E4810152 Hamilton Sundstrand Corporation semiconductor device diode Avl RFQ 4E4810 52-0001 Hamilton Sundstrand Corporation semiconductor device diode Avl RFQ 43912006-500 Honeywell Regelsysteme Gmbh Gesc semiconductor device diode Avl RFQ 4178600-568 Raytheon Aircraft semiconductor device diode Avl RFQ 353-9009-460 Rockwell Collins Inc semiconductor device diode Avl RFQ 343-213-049 Interstate Electronics Corporation semiconductor device diode Avl RFQ 337220A Qes Ltd Quality Electronic Services semiconductor device diode Avl RFQ 28473-41007 Selex Galileo Ltd semiconductor device diode Avl RFQ 26-1160-2 Raytheon Aircraft semiconductor device diode Avl RFQ 26-1027-4 Raytheon Aircraft semiconductor device diode Avl RFQ 2504899-203 Honeywell International Inc semiconductor device diode Avl RFQ 231047001 Dare Electronics Inc semiconductor device diode Avl RFQ 200922-001 Bae Systems semiconductor device diode Avl RFQ 1967850-1 Honeywell Intl Inc semiconductor device diode Avl RFQ 108650-01 Rolls Royce Corp semiconductor device diode Avl RFQ 027 4108 146349 Te Connectivity semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961004213002MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.130 INCHES MINIMUM AND 0.200 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.900 INCHES MINIMUM AND 1.250 INCHES MAXIMUM ADAV OVERALL DIAMETER 0.115 INCHES MINIMUM AND 0.180 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE CTQX CURRENT RATING PER CHARACTERISTIC 50.00 AMPERES FORWARD CURRENT, AVERAGE PRESET CTRD POWER RATING PER CHARACTERISTIC 20.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS AMBIENT AIR TEST TEST DATA DOCUMENT 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 81349-MIL-S-19500/420 GOVERNMENT SPECIFICATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.130 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.900 INCHES MINIMUM AND 1.250 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.115 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 AMPERES FORWARD CURRENT, AVERAGE PRESET |
| CTRD | POWER RATING PER CHARACTERISTIC | 20.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/420 GOVERNMENT SPECIFICATION |