NSN 5961-00-436-2288 of Semiconductor Devices Unitized - Parts Details
| Alternative NSN: 5961004362288 |
| Item Name: Semiconductor Devices Unitized |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 004362288 |
| NCB Code: USA (00) |
| Manufacturers: Electronic Industries Association , Solitron Devices Inc , Intersil Corporation , Kearfott Corp , Bae Systems , Edo Corporation , General Semiconductor Inc , Freescale Semiconductor Inc , Telcom Semiconductor Inc , Fairchild Semiconductor Corp |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers RELEASE5275B, RELEASE5275, MD5004, ITS-3248, G181-712-002 under NSN 5961-00-436-2288 of Semiconductor Devices Unitized manufactured by Electronic Industries Association, Solitron Devices Inc, Intersil Corporation, Kearfott Corp, Bae Systems.
Federal Supply Class of NSN 5961-00-436-2288 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-436-2288, 5961004362288
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Part No Manufacturer Item Name QTY RFQ RELEASE5275B Electronic Industries Association semiconductor devices unitized Avl RFQ RELEASE5275 Electronic Industries Association semiconductor devices unitized Avl RFQ MD5004 Solitron Devices Inc semiconductor devices unitized Avl RFQ ITS-3248 Intersil Corporation semiconductor devices unitized Avl RFQ G181-712-002 Kearfott Corp semiconductor devices unitized Avl RFQ G181-712-002 Bae Systems semiconductor devices unitized Avl RFQ 60907-1 Edo Corporation semiconductor devices unitized Avl RFQ 2N4067 General Semiconductor Inc semiconductor devices unitized Avl RFQ 2N4067 Freescale Semiconductor Inc semiconductor devices unitized Avl RFQ 2N4067 Telcom Semiconductor Inc semiconductor devices unitized Avl RFQ 2N4067 Intersil Corporation semiconductor devices unitized Avl RFQ 2N4067 Electronic Industries Association semiconductor devices unitized Avl RFQ 2N4066 Telcom Semiconductor Inc semiconductor devices unitized Avl RFQ 2N4066 Freescale Semiconductor Inc semiconductor devices unitized Avl RFQ 2N4066 Electronic Industries Association semiconductor devices unitized Avl RFQ 2N4066 General Semiconductor Inc semiconductor devices unitized Avl RFQ 2N4066 Fairchild Semiconductor Corp semiconductor devices unitized Avl RFQ
Characteristics Data of NSN 5961004362288MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.250 INCHES NOMINAL ABJT TERMINAL LENGTH 0.490 INCHES MINIMUM ADAV OVERALL DIAMETER 0.352 INCHES NOMINAL ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-76 ASKA COMPONENT NAME AND QUANTITY 2 TRANSISTOR AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.200 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON ALL TRANSISTOR CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 30.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR AND 6.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE ALL TRANSISTOR CTQX CURRENT RATING PER CHARACTERISTIC 200.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT ALL TRANSISTOR CTRD POWER RATING PER CHARACTERISTIC 600.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 8 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.250 INCHES NOMINAL |
| ABJT | TERMINAL LENGTH | 0.490 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.352 INCHES NOMINAL |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-76 |
| ASKA | COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR AND 6.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE ALL TRANSISTOR |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT ALL TRANSISTOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 600.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 8 UNINSULATED WIRE LEAD |