NSN 5961-00-449-7030 of Semiconductor Device Thyristor - Parts Details
Alternative NSN: 5961004497030 |
Item Name: Semiconductor Device Thyristor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 004497030 |
NCB Code: USA (00) |
Manufacturers: Adelco Elektronik Gmbh , Lacon Electronic Gmbh , Powerex Inc , Intersil Corporation , Westinghouse Electric Corp , Dla Land And Maritime , Bae Systems , Alcatel Lucent , Inspektorat Wsparcia Sil Zbrojnych , Eads Deutschland Gmbh Verteidig , Rca Corp , Compaq Federal Llc , Cardion Inc , Avago Technologies Us Inc Division , Hewlett Packard Co , Rolls Royce Corp |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers T2700DA, T2700D, DMS 88172B, 93-30944, 712 ITT 04210 SAAN under NSN 5961-00-449-7030 of Semiconductor Device Thyristor manufactured by Adelco Elektronik Gmbh, Lacon Electronic Gmbh, Powerex Inc, Intersil Corporation, Westinghouse Electric Corp.
Federal Supply Class of NSN 5961-00-449-7030 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-449-7030, 5961004497030
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Part No Manufacturer Item Name QTY RFQ T2700DA Adelco Elektronik Gmbh semiconductor device thyristor Avl RFQ T2700D Lacon Electronic Gmbh semiconductor device thyristor Avl RFQ T2700D Powerex Inc semiconductor device thyristor Avl RFQ T2700D Adelco Elektronik Gmbh semiconductor device thyristor Avl RFQ T2700D Intersil Corporation semiconductor device thyristor Avl RFQ T2700D Westinghouse Electric Corp semiconductor device thyristor Avl RFQ DMS 88172B Dla Land And Maritime semiconductor device thyristor Avl RFQ 93-30944 Bae Systems semiconductor device thyristor Avl RFQ 712 ITT 04210 SAAN Alcatel Lucent semiconductor device thyristor Avl RFQ 5961PL1375580 Inspektorat Wsparcia Sil Zbrojnych semiconductor device thyristor Avl RFQ 5800583-926400-106 Eads Deutschland Gmbh Verteidig semiconductor device thyristor Avl RFQ 40430 Rca Corp semiconductor device thyristor Avl RFQ 40430 Intersil Corporation semiconductor device thyristor Avl RFQ 40430 Compaq Federal Llc semiconductor device thyristor Avl RFQ 402451 Cardion Inc semiconductor device thyristor Avl RFQ 1884-0076 Avago Technologies Us Inc Division semiconductor device thyristor Avl RFQ 1884-0076 Hewlett Packard Co semiconductor device thyristor Avl RFQ 108774-01 Rolls Royce Corp semiconductor device thyristor Avl RFQ
Characteristics Data of NSN 5961004497030MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS AND METAL ABHP OVERALL LENGTH 0.962 INCHES NOMINAL ABJT TERMINAL LENGTH 0.360 INCHES MINIMUM ABKW OVERALL HEIGHT 0.340 INCHES NOMINAL ABMK OVERALL WIDTH 0.500 INCHES NOMINAL ALAS INTERNAL CONFIGURATION JUNCTION CONTACT AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CRTL CRITICALITY CODE JUSTIFICATION FEAT CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 4.00 AMPERES FORWARD CURRENT, TOTAL RMS PRESET CTRD POWER RATING PER CHARACTERISTIC 16.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR BLANK CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 100.0 DEG CELSIUS CASE FEAT SPECIAL FEATURES DESIGN ANALYSIS; JUNCTION PATTERN ARRANGEMENT: PNP NHCF NUCLEAR HARDNESS CRITICAL FEATURE HARDENED TTQY TERMINAL TYPE AND QUANTITY 1 CASE AND 2 PIN
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | GLASS AND METAL |
ABHP | OVERALL LENGTH | 0.962 INCHES NOMINAL |
ABJT | TERMINAL LENGTH | 0.360 INCHES MINIMUM |
ABKW | OVERALL HEIGHT | 0.340 INCHES NOMINAL |
ABMK | OVERALL WIDTH | 0.500 INCHES NOMINAL |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 4.00 AMPERES FORWARD CURRENT, TOTAL RMS PRESET |
CTRD | POWER RATING PER CHARACTERISTIC | 16.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR BLANK |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS CASE |
FEAT | SPECIAL FEATURES | DESIGN ANALYSIS; JUNCTION PATTERN ARRANGEMENT: PNP |
NHCF | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
TTQY | TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 PIN |