NSN 5961-00-451-4013 of Transistor - Parts Details
| Alternative NSN: 5961004514013 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 004514013 |
| NCB Code: USA (00) |
| Manufacturers: Adelco Elektronik Gmbh , Lacon Electronic Gmbh , Rockwell Collins Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers JAN2N3441A, JAN2N3441, 352-8011-440, 352-7500-471 under NSN 5961-00-451-4013 of Transistor manufactured by Adelco Elektronik Gmbh, Lacon Electronic Gmbh, Rockwell Collins Inc.
Federal Supply Class of NSN 5961-00-451-4013 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-451-4013, 5961004514013
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Part No Manufacturer Item Name QTY RFQ JAN2N3441A Adelco Elektronik Gmbh transistor Avl RFQ JAN2N3441 Adelco Elektronik Gmbh transistor Avl RFQ JAN2N3441 Lacon Electronic Gmbh transistor Avl RFQ 352-8011-440 Rockwell Collins Inc transistor Avl RFQ 352-7500-471 Rockwell Collins Inc transistor Avl RFQ
Characteristics Data of NSN 5961004514013MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.297 INCHES NOMINAL ABKW OVERALL HEIGHT 0.340 INCHES MAXIMUM ADAV OVERALL DIAMETER 0.620 INCHES MAXIMUM AKPV MOUNTING FACILITY QUANTITY 2 ALAS INTERNAL CONFIGURATION JUNCTION CONTACT ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR ASCQ INTERNAL JUNCTION CONFIGURATION NPN AXGY MOUNTING METHOD UNTHREADED HOLE CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 160.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 140.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN CTQX CURRENT RATING PER CHARACTERISTIC 2.00 AMPERES SOURCE CUTOFF CURRENT MINIMUM AND 3.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 1.00 MILLIAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT PRESET CTRD POWER RATING PER CHARACTERISTIC 142.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD AND 1 CASE
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.297 INCHES NOMINAL |
| ABKW | OVERALL HEIGHT | 0.340 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.620 INCHES MAXIMUM |
| AKPV | MOUNTING FACILITY QUANTITY | 2 |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | NPN |
| AXGY | MOUNTING METHOD | UNTHREADED HOLE |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 160.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 140.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 2.00 AMPERES SOURCE CUTOFF CURRENT MINIMUM AND 3.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 1.00 MILLIAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT PRESET |
| CTRD | POWER RATING PER CHARACTERISTIC | 142.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |