NSN 5961-00-469-9909 of Transistor - Parts Details
| Alternative NSN: 5961004699909 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 004699909 |
| NCB Code: USA (00) |
| Manufacturers: Rockwell Collins Inc , Siliconix Incorporated Div Silic , Union Carbide Corp |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 352-0898-031, 2N4393 under NSN 5961-00-469-9909 of Transistor manufactured by Rockwell Collins Inc, Siliconix Incorporated Div Silic, Union Carbide Corp.
Federal Supply Class of NSN 5961-00-469-9909 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-469-9909, 5961004699909
Characteristics Data of NSN 5961004699909MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.177 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ABKW OVERALL HEIGHT 0.190 INCHES MAXIMUM ABMK OVERALL WIDTH 0.165 INCHES MAXIMUM ADAV OVERALL DIAMETER 0.220 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN CTRD POWER RATING PER CHARACTERISTIC 360.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.177 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ABKW | OVERALL HEIGHT | 0.190 INCHES MAXIMUM |
| ABMK | OVERALL WIDTH | 0.165 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.220 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CTRD | POWER RATING PER CHARACTERISTIC | 360.0 MILLIWATTS MAXIMUM PEAK GATE POWER DISSIPATION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |