NSN 5961-00-481-0993 of Transistor - Parts Details
| Alternative NSN: 5961004810993 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 004810993 |
| NCB Code: USA (00) |
| Manufacturers: Electronic Industries Association , Rohde And Schwarz Inc , Adelco Elektronik Gmbh , Siliconix Incorporated Div Silic , Telcom Semiconductor Inc , Texas Instrument Inc , Lacon Electronic Gmbh , Honeywell International Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers RELEASE4671, AK0108156, 2N3331A, 2N3331, 10029855-103 under NSN 5961-00-481-0993 of Transistor manufactured by Electronic Industries Association, Rohde And Schwarz Inc, Adelco Elektronik Gmbh, Siliconix Incorporated Div Silic, Telcom Semiconductor Inc.
Federal Supply Class of NSN 5961-00-481-0993 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-481-0993, 5961004810993
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Part No Manufacturer Item Name QTY RFQ RELEASE4671 Electronic Industries Association transistor Avl RFQ AK0108156 Rohde And Schwarz Inc transistor Avl RFQ 2N3331A Adelco Elektronik Gmbh transistor Avl RFQ 2N3331 Siliconix Incorporated Div Silic transistor Avl RFQ 2N3331 Telcom Semiconductor Inc transistor Avl RFQ 2N3331 Texas Instrument Inc transistor Avl RFQ 2N3331 Adelco Elektronik Gmbh transistor Avl RFQ 2N3331 Lacon Electronic Gmbh transistor Avl RFQ 2N3331 Electronic Industries Association transistor Avl RFQ 10029855-103 Honeywell International Inc transistor Avl RFQ
Characteristics Data of NSN 5961004810993MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.210 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.230 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE CTQX CURRENT RATING PER CHARACTERISTIC 10.00 MILLIAMPERES MAXIMUM GATE CURRENT CTRD POWER RATING PER CHARACTERISTIC 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION TTQY TERMINAL TYPE AND QUANTITY 4 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 80131-RELEASE4671 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM GATE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE4671 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |