NSN 5961-00-577-6085 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961005776085 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 005776085 |
| NCB Code: USA (00) |
| Manufacturers: Westinghouse Electric Corp , Hamilton Sundstrand Corporation , Rockwell Collins Inc , Electronic Industries Association , Raytheon Aircraft , Texas Instrument Inc , Agilent Technologies Inc , Hewlett Packard Co , Lucent Technologies Inc , American Telephone And Telegraph |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 906D976-3, 518263-24, 353-2596-000, 353-2596-00, 1N647 under NSN 5961-00-577-6085 of Semiconductor Device Diode manufactured by Westinghouse Electric Corp, Hamilton Sundstrand Corporation, Rockwell Collins Inc, Electronic Industries Association, Raytheon Aircraft.
Federal Supply Class of NSN 5961-00-577-6085 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-577-6085, 5961005776085
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Part No Manufacturer Item Name QTY RFQ 906D976-3 Westinghouse Electric Corp semiconductor device diode Avl RFQ 518263-24 Hamilton Sundstrand Corporation semiconductor device diode Avl RFQ 353-2596-000 Rockwell Collins Inc semiconductor device diode Avl RFQ 353-2596-00 Rockwell Collins Inc semiconductor device diode Avl RFQ 1N647 Electronic Industries Association semiconductor device diode Avl RFQ 1N647 Raytheon Aircraft semiconductor device diode Avl RFQ 1N647 Texas Instrument Inc semiconductor device diode Avl RFQ 1901-0129 Agilent Technologies Inc semiconductor device diode Avl RFQ 1901-0129 Hewlett Packard Co semiconductor device diode Avl RFQ 181654 Lucent Technologies Inc semiconductor device diode Avl RFQ 181654 American Telephone And Telegraph semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961005776085MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.300 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.150 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 400.0 MAXIMUM REVERSE VOLTAGE, PEAK CTQX CURRENT RATING PER CHARACTERISTIC 3.00 AMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT ANY ACCEPTABLE CTRD POWER RATING PER CHARACTERISTIC 60.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 1 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 80131-RELEASE1986 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.150 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 3.00 AMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT ANY ACCEPTABLE |
| CTRD | POWER RATING PER CHARACTERISTIC | 60.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 1 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE1986 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |