NSN 5961-00-828-0721 of Transistor - Parts Details
| Alternative NSN: 5961008280721 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 008280721 |
| NCB Code: USA (00) |
| Manufacturers: Electronic Industries Association , Bei , Freescale Semiconductor Inc , Diamond Electronics Inc , General Dynamics Advanced Technology , Eldorado Electrodata Corp , Newport Electronics Inc , Solitron Devices Inc , Electro Scientific Industries In , B V Nederlandse |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers RELEASE 5773, Q0264, MPF105, 847102-0022, 5961-003671 under NSN 5961-00-828-0721 of Transistor manufactured by Electronic Industries Association, Bei, Freescale Semiconductor Inc, Diamond Electronics Inc, General Dynamics Advanced Technology.
Federal Supply Class of NSN 5961-00-828-0721 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-828-0721, 5961008280721
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Part No Manufacturer Item Name QTY RFQ RELEASE 5773 Electronic Industries Association transistor Avl RFQ Q0264 Bei transistor Avl RFQ MPF105 Freescale Semiconductor Inc transistor Avl RFQ 847102-0022 Diamond Electronics Inc transistor Avl RFQ 847102-0022 General Dynamics Advanced Technology transistor Avl RFQ 5961-003671 Eldorado Electrodata Corp transistor Avl RFQ 47603 Newport Electronics Inc transistor Avl RFQ 2N5459 Electronic Industries Association transistor Avl RFQ 2N5459 Freescale Semiconductor Inc transistor Avl RFQ 2N5459 Solitron Devices Inc transistor Avl RFQ 19183 Electro Scientific Industries In transistor Avl RFQ 06-01-30-652 B V Nederlandse transistor Avl RFQ
Characteristics Data of NSN 5961008280721MRC Criteria Characteristic ABBH INCLOSURE MATERIAL PLASTIC ABHP OVERALL LENGTH 0.210 INCHES MAXIMUM ABKW OVERALL HEIGHT 0.205 INCHES MAXIMUM ABMK OVERALL WIDTH 0.165 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-92 AXGY MOUNTING METHOD TERMINAL CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQX CURRENT RATING PER CHARACTERISTIC 10.00 MILLIAMPERES MAXIMUM GATE CURRENT CTRD POWER RATING PER CHARACTERISTIC 310.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 135.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 80131-RELEASE5773 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| ABKW | OVERALL HEIGHT | 0.205 INCHES MAXIMUM |
| ABMK | OVERALL WIDTH | 0.165 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM GATE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 310.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 135.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE5773 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE |