NSN 5961-00-846-9125 of Semiconductor Device Diode - Parts Details
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers W5046545CS, S57-7866, RELEASE 4030, C1421, 961-070-20 under NSN 5961-00-846-9125 of Semiconductor Device Diode manufactured by Oerlikon Buehrle Ag Werkzeugmaschinenfabrik, Miltope Corp, Electronic Industries Association, Howell Corp, Emerson Electric Co.
Federal Supply Class of NSN 5961-00-846-9125 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-846-9125, 5961008469125
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Part No Manufacturer Item Name QTY RFQ W5046545CS Oerlikon Buehrle Ag Werkzeugmaschinenfabrik semiconductor device diode Avl RFQ S57-7866 Miltope Corp semiconductor device diode Avl RFQ RELEASE 4030 Electronic Industries Association semiconductor device diode Avl RFQ C1421 Howell Corp semiconductor device diode Avl RFQ 961-070-20 Emerson Electric Co semiconductor device diode Avl RFQ 95104 Telcom Semiconductor Inc semiconductor device diode Avl RFQ 95104 International Rectifier Corporation semiconductor device diode Avl RFQ 95104 C O D I Corp semiconductor device diode Avl RFQ 95104 Freescale Semiconductor Inc semiconductor device diode Avl RFQ 95104 Gilbert Engineering Co Inc Incon semiconductor device diode Avl RFQ 720670-035REVB Raytheon Aircraft semiconductor device diode Avl RFQ 353-3044-000 Rockwell Collins Inc semiconductor device diode Avl RFQ 353-3044-000 Alcatel Usa Inc Div Wtpg semiconductor device diode Avl RFQ 353-3044-00 Rockwell Collins Inc semiconductor device diode Avl RFQ 353-3044-00 Alcatel Usa Inc Div Wtpg semiconductor device diode Avl RFQ 353-2862-000 Rockwell Collins Inc semiconductor device diode Avl RFQ 2064217 Itt Cannon semiconductor device diode Avl RFQ 1N702A Burns Aerospace Corp semiconductor device diode Avl RFQ 1N702A C O D I Corp semiconductor device diode Avl RFQ 1N702A Electronic Industries Association semiconductor device diode Avl RFQ 1N702A Electronic Transistors Corp semiconductor device diode Avl RFQ 1N702A General Semiconductor Inc semiconductor device diode Avl RFQ 1N702A Semitronics Corp semiconductor device diode Avl RFQ 1N702A Semiconductor Components Industrial semiconductor device diode Avl RFQ 1N702A Raytheon Aircraft semiconductor device diode Avl RFQ 1N702A International Rectifier Corporation semiconductor device diode Avl RFQ 1N702A N A P Smd Technology Inc semiconductor device diode Avl RFQ 1N702A Telcom Semiconductor Inc semiconductor device diode Avl RFQ 1N702A Solitron Devices Inc semiconductor device diode Avl RFQ 1N702A Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N702A Gilbert Engineering Co Inc Incon semiconductor device diode Avl RFQ 1N702A Trw Electronic Components Division semiconductor device diode Avl RFQ 1N702A Texas Instrument Inc semiconductor device diode Avl RFQ 1N702A International Diode Corp semiconductor device diode Avl RFQ 1N702A On Semiconductors semiconductor device diode Avl RFQ 1N702A Microsemi Corporation semiconductor device diode Avl RFQ 1N702 L 3 Communications semiconductor device diode Avl RFQ 1N702 N A P Smd Technology Inc semiconductor device diode Avl RFQ 1N4371 Texas Instrument Inc semiconductor device diode Avl RFQ 1781379-1 Honeywell International Inc semiconductor device diode Avl RFQ 1781379-1 Honeywell Intl Inc semiconductor device diode Avl RFQ 1299116+58 Honeywell International Inc semiconductor device diode Avl RFQ 013-461 Ampex Great Britain Ltd semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961008469125MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.265 INCHES NOMINAL ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.096 INCHES NOMINAL AFZC FUNCTION FOR WHICH DESIGNED ZENER DIODE AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 2.6 NOMINAL NOMINAL REGULATOR VOLTAGE CTQS VOLTAGE TOLERANCE IN PERCENT -11.0/+11.0 CTQX CURRENT RATING PER CHARACTERISTIC 5.00 MILLIAMPERES ALL PRIMARIES HORSEPOWER METRIC CTRD POWER RATING PER CHARACTERISTIC 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 80131-RELEASE 4030 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION DO-7
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.265 INCHES NOMINAL |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.096 INCHES NOMINAL |
| AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.6 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -11.0/+11.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 5.00 MILLIAMPERES ALL PRIMARIES HORSEPOWER METRIC |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE 4030 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 |