NSN 5961-00-866-4810 of Transistor - Parts Details
| Alternative NSN: 5961008664810 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 008664810 |
| NCB Code: USA (00) |
| Manufacturers: Thales Training And Simulation Inc , Rohde And Schwarz Inc , Mbda Uk Ltd , Bae Systems , Eads Deutschland Gmbh Verteidig , Zarlink , Texas Instrument Inc , Motorola Inc , Esco Corp , Martin Marietta Corp , Amperex Electronic Corp , Fairchild Semiconductor Corp , Freescale Semiconductor Inc , General Instrument Corp , Gilbert Engineering Co Inc Incon , Electronic Industries Association , Sylvania Electric Products Inc , Alpine Industries Inc , Ampex Data Systems Corporation |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers ND214467, GQF24342, B46136, AK0104467, 9306-2000-050 under NSN 5961-00-866-4810 of Transistor manufactured by Thales Training And Simulation Inc, Rohde And Schwarz Inc, Mbda Uk Ltd, Bae Systems, Eads Deutschland Gmbh Verteidig.
Federal Supply Class of NSN 5961-00-866-4810 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-866-4810, 5961008664810
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Part No Manufacturer Item Name QTY RFQ ND214467 Thales Training And Simulation Inc transistor Avl RFQ GQF24342 Rohde And Schwarz Inc transistor Avl RFQ B46136 Mbda Uk Ltd transistor Avl RFQ AK0104467 Rohde And Schwarz Inc transistor Avl RFQ 9306-2000-050 Bae Systems transistor Avl RFQ 5L5512-203-46 Eads Deutschland Gmbh Verteidig transistor Avl RFQ 417-4-98074-000 Zarlink transistor Avl RFQ 2N708 Texas Instrument Inc transistor Avl RFQ 2N708 Motorola Inc transistor Avl RFQ 2N708 Esco Corp transistor Avl RFQ 2N708 Martin Marietta Corp transistor Avl RFQ 2N708 Amperex Electronic Corp transistor Avl RFQ 2N708 Fairchild Semiconductor Corp transistor Avl RFQ 2N708 Freescale Semiconductor Inc transistor Avl RFQ 2N708 General Instrument Corp transistor Avl RFQ 2N708 Gilbert Engineering Co Inc Incon transistor Avl RFQ 2N708 Electronic Industries Association transistor Avl RFQ 2N708 Sylvania Electric Products Inc transistor Avl RFQ 2N708 Bae Systems transistor Avl RFQ 2N708 Alpine Industries Inc transistor Avl RFQ 014-137 Ampex Data Systems Corporation transistor Avl RFQ 0104467 Rohde And Schwarz Inc transistor Avl RFQ
Characteristics Data of NSN 5961008664810MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.210 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ALAS INTERNAL CONFIGURATION JUNCTION CONTACT ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN CTRD POWER RATING PER CHARACTERISTIC 360.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION FEAT SPECIAL FEATURES JUNCTION PATTERN ARRANGEMENT: NPN TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD ADAV OVERALL DIAMETER 0.230 INCHES MAXIMUM ZZZK SPECIFICATION/STANDARD DATA 80131-RELEASE3289 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CTRD | POWER RATING PER CHARACTERISTIC | 360.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE3289 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |