NSN 5961-00-904-7586 of Semiconductor Device Thyristor - Parts Details
| Alternative NSN: 5961009047586 |
| Item Name: Semiconductor Device Thyristor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 009047586 |
| NCB Code: USA (00) |
| Manufacturers: Adelco Elektronik Gmbh , Lacon Electronic Gmbh , Thales Communications Inc , Jaidinger Mfg Co Inc Dba Jaico Products , Kollsman , Inspektorat Wsparcia Sil Zbrojnych , E C A Etablissement Central , Freescale Semiconductor Inc , Bae Systems |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers JAN2N2323A, 848238-0001, 848100-0001, 771-225, 68413014601 under NSN 5961-00-904-7586 of Semiconductor Device Thyristor manufactured by Adelco Elektronik Gmbh, Lacon Electronic Gmbh, Thales Communications Inc, Jaidinger Mfg Co Inc Dba Jaico Products, Kollsman.
Federal Supply Class of NSN 5961-00-904-7586 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-904-7586, 5961009047586
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Part No Manufacturer Item Name QTY RFQ JAN2N2323A Adelco Elektronik Gmbh semiconductor device thyristor Avl RFQ JAN2N2323A Lacon Electronic Gmbh semiconductor device thyristor Avl RFQ 848238-0001 Thales Communications Inc semiconductor device thyristor Avl RFQ 848100-0001 Thales Communications Inc semiconductor device thyristor Avl RFQ 771-225 Jaidinger Mfg Co Inc Dba Jaico Products semiconductor device thyristor Avl RFQ 68413014601 Kollsman semiconductor device thyristor Avl RFQ 5961PL1822120 Inspektorat Wsparcia Sil Zbrojnych semiconductor device thyristor Avl RFQ 5961PL1795928 Inspektorat Wsparcia Sil Zbrojnych semiconductor device thyristor Avl RFQ 5961PL1385166 Inspektorat Wsparcia Sil Zbrojnych semiconductor device thyristor Avl RFQ 5961009047586 E C A Etablissement Central semiconductor device thyristor Avl RFQ 2N2323 Freescale Semiconductor Inc semiconductor device thyristor Avl RFQ 200659-001 Bae Systems semiconductor device thyristor Avl RFQ
Characteristics Data of NSN 5961009047586MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.500 INCHES MINIMUM AND 1.750 INCHES MAXIMUM ADAV OVERALL DIAMETER 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION JUNCTION CONTACT ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE ANODE AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.200 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 2.2 MAXIMUM FORWARD VOLTAGE, PEAK AND 1.0 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 50.0 MAXIMUM REVERSE VOLTAGE, PEAK CTQX CURRENT RATING PER CHARACTERISTIC 220.00 MILLIAMPERES FORWARD CURRENT, TOTAL RMS MEGAHERTZ CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 125.0 DEG CELSIUS AMBIENT AIR FEAT SPECIAL FEATURES JUNCTION PATTERN ARRANGEMENT: PNPN TEST TEST DATA DOCUMENT 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 81349-MIL-S-19500/276 GOVERNMENT SPECIFICATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM AND 1.750 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.2 MAXIMUM FORWARD VOLTAGE, PEAK AND 1.0 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 50.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 220.00 MILLIAMPERES FORWARD CURRENT, TOTAL RMS MEGAHERTZ |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/276 GOVERNMENT SPECIFICATION |