NSN 5961-00-953-4494 of Semiconductor Devices Unitized - Parts Details
Alternative NSN: 5961009534494 |
Item Name: Semiconductor Devices Unitized |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 009534494 |
NCB Code: USA (00) |
Manufacturers: Electronic Industries Association , Selex Communications Gmbh , Bastogi Sistemi Spa , Rockwell Collins Inc , Central Semiconductor Corp , Csr Industries Inc , Solid State Devices Inc , Freescale Semiconductor Inc , On Semiconductors , Telcom Semiconductor Inc , General Semiconductor Inc , Selex Galileo Ltd |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers RELEASE3641, C065709P, 351-0004-010, 2N2223A TIN LEAD, 2N2223A under NSN 5961-00-953-4494 of Semiconductor Devices Unitized manufactured by Electronic Industries Association, Selex Communications Gmbh, Bastogi Sistemi Spa, Rockwell Collins Inc, Central Semiconductor Corp.
Federal Supply Class of NSN 5961-00-953-4494 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-953-4494, 5961009534494
-
Part No Manufacturer Item Name QTY RFQ RELEASE3641 Electronic Industries Association semiconductor devices unitized Avl RFQ C065709P Selex Communications Gmbh semiconductor devices unitized Avl RFQ C065709P Bastogi Sistemi Spa semiconductor devices unitized Avl RFQ 351-0004-010 Rockwell Collins Inc semiconductor devices unitized Avl RFQ 2N2223A TIN LEAD Central Semiconductor Corp semiconductor devices unitized Avl RFQ 2N2223A Csr Industries Inc semiconductor devices unitized Avl RFQ 2N2223A Electronic Industries Association semiconductor devices unitized Avl RFQ 2N2223A Solid State Devices Inc semiconductor devices unitized Avl RFQ 2N2223A Freescale Semiconductor Inc semiconductor devices unitized Avl RFQ 2N2223A On Semiconductors semiconductor devices unitized Avl RFQ 2N2223A Telcom Semiconductor Inc semiconductor devices unitized Avl RFQ 2N2223A General Semiconductor Inc semiconductor devices unitized Avl RFQ 28463-01110 Selex Galileo Ltd semiconductor devices unitized Avl RFQ 28463 Selex Galileo Ltd semiconductor devices unitized Avl RFQ
Characteristics Data of NSN 5961009534494MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.150 INCHES MINIMUM AND 0.260 INCHES MAXIMUM ADAV OVERALL DIAMETER 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM AFZC FUNCTION FOR WHICH DESIGNED AMPLIFIER ASKA COMPONENT NAME AND QUANTITY 2 TRANSISTOR AXGY MOUNTING METHOD TERMINAL CTMZ SEMICONDUCTOR MATERIAL SILICON ALL TRANSISTOR CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN ALL TRANSISTOR AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN ALL TRANSISTOR AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR AND 80.0 CTQX CURRENT RATING PER CHARACTERISTIC 500.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM ALL TRANSISTOR CTRD POWER RATING PER CHARACTERISTIC 1.6 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE 1ST TRANSISTOR CTRD POWER RATING PER CHARACTERISTIC 1.6 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE 2ND TRANSISTOR CTRD POWER RATING PER CHARACTERISTIC 3.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL TRANSISTOR CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION FEAT SPECIAL FEATURES ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN TTQY TERMINAL TYPE AND QUANTITY 6 UNINSULATED WIRE LEAD
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.150 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
ADAV | OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
AFZC | FUNCTION FOR WHICH DESIGNED | AMPLIFIER |
ASKA | COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
AXGY | MOUNTING METHOD | TERMINAL |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN ALL TRANSISTOR AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN ALL TRANSISTOR AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR AND 80.0 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 500.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM ALL TRANSISTOR |
CTRD | POWER RATING PER CHARACTERISTIC | 1.6 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE 1ST TRANSISTOR |
CTRD | POWER RATING PER CHARACTERISTIC | 1.6 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE 2ND TRANSISTOR |
CTRD | POWER RATING PER CHARACTERISTIC | 3.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL TRANSISTOR |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
FEAT | SPECIAL FEATURES | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN |
TTQY | TERMINAL TYPE AND QUANTITY | 6 UNINSULATED WIRE LEAD |