NSN 5961-00-985-9110 of Transistor - Parts Details
Alternative NSN: 5961009859110 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 009859110 |
NCB Code: USA (00) |
Manufacturers: Epcos Ag , Epcos Ag Abt Pr Roe K Pm , Motorola Inc , Cummins Power Generation Inc Db , Freescale Semiconductor Inc , General Dynamics C4 Systems Inc , Hewlett Packard Co , General Instrument Corp |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers Q62702-S170, 2N2907A, 1853-0281, 100891-2 under NSN 5961-00-985-9110 of Transistor manufactured by Epcos Ag, Epcos Ag Abt Pr Roe K Pm, Motorola Inc, Cummins Power Generation Inc Db, Freescale Semiconductor Inc.
Federal Supply Class of NSN 5961-00-985-9110 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-00-985-9110, 5961009859110
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Part No Manufacturer Item Name QTY RFQ Q62702-S170 Epcos Ag transistor Avl RFQ Q62702-S170 Epcos Ag Abt Pr Roe K Pm transistor Avl RFQ 2N2907A Motorola Inc transistor Avl RFQ 2N2907A Cummins Power Generation Inc Db transistor Avl RFQ 2N2907A Freescale Semiconductor Inc transistor Avl RFQ 2N2907A General Dynamics C4 Systems Inc transistor Avl RFQ 1853-0281 Hewlett Packard Co transistor Avl RFQ 100891-2 General Instrument Corp transistor Avl RFQ
Characteristics Data of NSN 5961009859110MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.210 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.230 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION JUNCTION CONTACT ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION T0-18 ASCQ INTERNAL JUNCTION CONFIGURATION PNP AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN CTQX CURRENT RATING PER CHARACTERISTIC 600.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM CTRD POWER RATING PER CHARACTERISTIC 400.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD ZZZX DEPARTURE FROM CITED DESIGNATOR EXCEPT QUALITY CONTROLLED FOR POLARIS
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | T0-18 |
ASCQ | INTERNAL JUNCTION CONFIGURATION | PNP |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
CTQX | CURRENT RATING PER CHARACTERISTIC | 600.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM |
CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
ZZZX | DEPARTURE FROM CITED DESIGNATOR | EXCEPT QUALITY CONTROLLED FOR POLARIS |