NSN 5961-01-017-6023 of Transistor - Parts Details
| Alternative NSN: 5961010176023 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 010176023 |
| NCB Code: USA (01) |
| Manufacturers: Electronic Industries Association , Siliconix Incorporated Div Silic , National Semiconductor Corp , Hewlett Packard Co , Agilent Technologies Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers RELEASE5344, 2N4117A, 1855-0305 under NSN 5961-01-017-6023 of Transistor manufactured by Electronic Industries Association, Siliconix Incorporated Div Silic, National Semiconductor Corp, Hewlett Packard Co, Agilent Technologies Inc.
Federal Supply Class of NSN 5961-01-017-6023 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-017-6023, 5961010176023
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Part No Manufacturer Item Name QTY RFQ RELEASE5344 Electronic Industries Association transistor Avl RFQ 2N4117A Siliconix Incorporated Div Silic transistor Avl RFQ 2N4117A National Semiconductor Corp transistor Avl RFQ 2N4117A Electronic Industries Association transistor Avl RFQ 1855-0305 Hewlett Packard Co transistor Avl RFQ 1855-0305 Agilent Technologies Inc transistor Avl RFQ
Characteristics Data of NSN 5961010176023MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.210 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.230 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE CTQX CURRENT RATING PER CHARACTERISTIC 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC CTRD POWER RATING PER CHARACTERISTIC 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION TTQY TERMINAL TYPE AND QUANTITY 4 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 80131-RELEASE5344 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE5344 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |