NSN 5961-01-022-4902 of Transistor - Parts Details
| Alternative NSN: 5961010224902 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 010224902 |
| NCB Code: USA (01) |
| Manufacturers: Siliconix Incorporated Div Silic , Rs Components Limited , Intersil Corporation , Thales Communications Inc , Paeaeesikunta Logistiikkaosasto |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers J113-18, J113, E113, 91343319, 168-7080 under NSN 5961-01-022-4902 of Transistor manufactured by Siliconix Incorporated Div Silic, Rs Components Limited, Intersil Corporation, Thales Communications Inc, Paeaeesikunta Logistiikkaosasto.
Federal Supply Class of NSN 5961-01-022-4902 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-022-4902, 5961010224902
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Part No Manufacturer Item Name QTY RFQ J113-18 Siliconix Incorporated Div Silic transistor Avl RFQ J113 Rs Components Limited transistor Avl RFQ J113 Intersil Corporation transistor Avl RFQ E113 Siliconix Incorporated Div Silic transistor Avl RFQ E113 Intersil Corporation transistor Avl RFQ 91343319 Thales Communications Inc transistor Avl RFQ 168-7080 Rs Components Limited transistor Avl RFQ 10070320 Paeaeesikunta Logistiikkaosasto transistor Avl RFQ 048894-0001 Thales Communications Inc transistor Avl RFQ
Characteristics Data of NSN 5961010224902MRC Criteria Characteristic ABBH INCLOSURE MATERIAL PLASTIC ABHP OVERALL LENGTH 0.250 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.215 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 35.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE CTQX CURRENT RATING PER CHARACTERISTIC 2.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT CTRD POWER RATING PER CHARACTERISTIC 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 125.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ABHP | OVERALL LENGTH | 0.250 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.215 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 35.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 2.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |