NSN 5961-01-023-1697 of Semiconductor Device Set - Parts Details
| Alternative NSN: 5961010231697 |
| Item Name: Semiconductor Device Set |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 010231697 |
| NCB Code: USA (01) |
| Manufacturers: Semiconductor Technology Inc , Gpd Global Inc , Intersil Corporation |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers ST-3024, SK3015 under NSN 5961-01-023-1697 of Semiconductor Device Set manufactured by Semiconductor Technology Inc, Gpd Global Inc, Intersil Corporation.
Federal Supply Class of NSN 5961-01-023-1697 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-023-1697, 5961010231697
Characteristics Data of NSN 5961010231697MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ALL TRANSISTOR ABHP OVERALL LENGTH 1.573 INCHES MAXIMUM ALL TRANSISTOR ABKW OVERALL HEIGHT 0.350 INCHES NOMINAL ALL TRANSISTOR ABMK OVERALL WIDTH 1.050 INCHES MAXIMUM ALL TRANSISTOR AKPV MOUNTING FACILITY QUANTITY 2 ALL TRANSISTOR ALAS INTERNAL CONFIGURATION JUNCTION CONTACT ALL TRANSISTOR ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-3 ALL TRANSISTOR ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR ALL TRANSISTOR ASCQ INTERNAL JUNCTION CONFIGURATION PNP ALL TRANSISTOR ASDD COMPONENT FUNCTION RELATIONSHIP MATCHED ASKA COMPONENT NAME AND QUANTITY 2 TRANSISTOR AXGY MOUNTING METHOD UNTHREADED HOLE ALL TRANSISTOR CTMZ SEMICONDUCTOR MATERIAL GERMANIUM ALL TRANSISTOR CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN ALL TRANSISTOR AND 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN ALL TRANSISTOR AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSIS CTQX CURRENT RATING PER CHARACTERISTIC 11.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM ALL TRANSISTOR CTRD POWER RATING PER CHARACTERISTIC 40.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL TRANSISTOR CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 110.0 DEG CELSIUS JUNCTION ALL TRANSISTOR TTQY TERMINAL TYPE AND QUANTITY 2 PIN ALL TRANSISTOR AND 1 CASE ALL TRANSISTOR
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL ALL TRANSISTOR |
| ABHP | OVERALL LENGTH | 1.573 INCHES MAXIMUM ALL TRANSISTOR |
| ABKW | OVERALL HEIGHT | 0.350 INCHES NOMINAL ALL TRANSISTOR |
| ABMK | OVERALL WIDTH | 1.050 INCHES MAXIMUM ALL TRANSISTOR |
| AKPV | MOUNTING FACILITY QUANTITY | 2 ALL TRANSISTOR |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL TRANSISTOR |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 ALL TRANSISTOR |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR ALL TRANSISTOR |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | PNP ALL TRANSISTOR |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| ASKA | COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| AXGY | MOUNTING METHOD | UNTHREADED HOLE ALL TRANSISTOR |
| CTMZ | SEMICONDUCTOR MATERIAL | GERMANIUM ALL TRANSISTOR |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN ALL TRANSISTOR AND 75.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN ALL TRANSISTOR AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSIS |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 11.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM ALL TRANSISTOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 40.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL TRANSISTOR |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 110.0 DEG CELSIUS JUNCTION ALL TRANSISTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 PIN ALL TRANSISTOR AND 1 CASE ALL TRANSISTOR |