NSN 5961-01-024-2139 of Transistor - Parts Details
| Alternative NSN: 5961010242139 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 010242139 |
| NCB Code: USA (01) |
| Manufacturers: Thomson Multimedia Broadcast Sol , Pultz John M Co Inc , Siliconix Incorporated Div Silic , National Semiconductor Corp , Southcom International Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers P58-005762-018, J111-18, E111, 450007 under NSN 5961-01-024-2139 of Transistor manufactured by Thomson Multimedia Broadcast Sol, Pultz John M Co Inc, Siliconix Incorporated Div Silic, National Semiconductor Corp, Southcom International Inc.
Federal Supply Class of NSN 5961-01-024-2139 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-024-2139, 5961010242139
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Part No Manufacturer Item Name QTY RFQ P58-005762-018 Thomson Multimedia Broadcast Sol transistor Avl RFQ P58-005762-018 Pultz John M Co Inc transistor Avl RFQ J111-18 Siliconix Incorporated Div Silic transistor Avl RFQ E111 National Semiconductor Corp transistor Avl RFQ E111 Siliconix Incorporated Div Silic transistor Avl RFQ 450007 Southcom International Inc transistor Avl RFQ
Characteristics Data of NSN 5961010242139MRC Criteria Characteristic ABBH INCLOSURE MATERIAL PLASTIC ABHP OVERALL LENGTH 0.120 INCHES MINIMUM AND 0.240 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.192 INCHES MINIMUM AND 0.222 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 5.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE CTQX CURRENT RATING PER CHARACTERISTIC 50.00 MILLIAMPERES MAXIMUM GATE CURRENT CTRD POWER RATING PER CHARACTERISTIC 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 125.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.240 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.192 INCHES MINIMUM AND 0.222 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 35.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM GATE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |