NSN 5961-01-029-8452 of Transistor - Parts Details
| Alternative NSN: 5961010298452 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 010298452 |
| NCB Code: USA (01) |
| Manufacturers: Telcom Semiconductor Inc , Texas Instrument Inc , Siliconix Incorporated Div Silic , Navair Ltd , Raytheon Aircraft , Raytheon Technical Services Company |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers U2263, SFC4045, FN2208, 2888020-1 under NSN 5961-01-029-8452 of Transistor manufactured by Telcom Semiconductor Inc, Texas Instrument Inc, Siliconix Incorporated Div Silic, Navair Ltd, Raytheon Aircraft.
Federal Supply Class of NSN 5961-01-029-8452 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-029-8452, 5961010298452
-
Part No Manufacturer Item Name QTY RFQ U2263 Telcom Semiconductor Inc transistor Avl RFQ SFC4045 Texas Instrument Inc transistor Avl RFQ FN2208 Siliconix Incorporated Div Silic transistor Avl RFQ 2888020-1 Navair Ltd transistor Avl RFQ 2888020-1 Raytheon Aircraft transistor Avl RFQ 2888020-1 Raytheon Technical Services Company transistor Avl RFQ
Characteristics Data of NSN 5961010298452MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM ADAV OVERALL DIAMETER 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE CTRD POWER RATING PER CHARACTERISTIC 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION TEST TEST DATA DOCUMENT 10001-2888020 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| TEST | TEST DATA DOCUMENT | 10001-2888020 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |