NSN 5961-01-047-5161 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961010475161 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 010475161 |
| NCB Code: USA (01) |
| Manufacturers: Electronic Industries Association , Freescale Semiconductor Inc , Nai Technologies Inc , North Atlantic Industries Inc , Genrad Inc , Selex Galileo Ltd , Paeaeesikunta Logistiikkaosasto , Rockwell Collins Inc , Ultra Electronics Ltd , Fairchild Semiconductor Corp , Semiconductor Components Industrial , Texas Instrument Inc , International Rectifier Corporation , Microsemi Corporation , Motorola Solutions Inc Us Fe , Thales Avionics , Eaton Corp |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers RELEASE 6425, IN5818, 886005, 4200-5818, 415 4 06022 under NSN 5961-01-047-5161 of Semiconductor Device Diode manufactured by Electronic Industries Association, Freescale Semiconductor Inc, Nai Technologies Inc, North Atlantic Industries Inc, Genrad Inc.
Federal Supply Class of NSN 5961-01-047-5161 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-047-5161, 5961010475161
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Part No Manufacturer Item Name QTY RFQ RELEASE 6425 Electronic Industries Association semiconductor device diode Avl RFQ IN5818 Freescale Semiconductor Inc semiconductor device diode Avl RFQ 886005 Nai Technologies Inc semiconductor device diode Avl RFQ 886005 North Atlantic Industries Inc semiconductor device diode Avl RFQ 4200-5818 Genrad Inc semiconductor device diode Avl RFQ 415 4 06022 Selex Galileo Ltd semiconductor device diode Avl RFQ 403-7710 Paeaeesikunta Logistiikkaosasto semiconductor device diode Avl RFQ 353-6614-010 Rockwell Collins Inc semiconductor device diode Avl RFQ 201130 Ultra Electronics Ltd semiconductor device diode Avl RFQ 1N5818 Electronic Industries Association semiconductor device diode Avl RFQ 1N5818 Fairchild Semiconductor Corp semiconductor device diode Avl RFQ 1N5818 Semiconductor Components Industrial semiconductor device diode Avl RFQ 1N5818 Texas Instrument Inc semiconductor device diode Avl RFQ 1N5818 International Rectifier Corporation semiconductor device diode Avl RFQ 1N5818 Microsemi Corporation semiconductor device diode Avl RFQ 1N5818 Motorola Solutions Inc Us Fe semiconductor device diode Avl RFQ 1N5818 Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N518 Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1952366 Thales Avionics semiconductor device diode Avl RFQ 143322002 Eaton Corp semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961010475161MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.182 INCHES NOMINAL ABJT TERMINAL LENGTH 1.100 INCHES MINIMUM ADAV OVERALL DIAMETER 0.096 INCHES NOMINAL AFZC FUNCTION FOR WHICH DESIGNED RECTIFIER ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION DO-41 AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 1.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 125.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.182 INCHES NOMINAL |
| ABJT | TERMINAL LENGTH | 1.100 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.096 INCHES NOMINAL |
| AFZC | FUNCTION FOR WHICH DESIGNED | RECTIFIER |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-41 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |