NSN 5961-01-066-7178 of Transistor - Parts Details
| Alternative NSN: 5961010667178 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 010667178 |
| NCB Code: USA (01) |
| Manufacturers: Selex Galileo Ltd , Rohde And Schwarz Inc , Thales Optronics Limited , Paeaeesikunta Logistiikkaosasto , Texas Instrument Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers VA75-0077-1, VA-75-0077-001, AM2041910, 9337 230 50682, 423-9796 under NSN 5961-01-066-7178 of Transistor manufactured by Selex Galileo Ltd, Rohde And Schwarz Inc, Thales Optronics Limited, Paeaeesikunta Logistiikkaosasto, Texas Instrument Inc.
Federal Supply Class of NSN 5961-01-066-7178 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-066-7178, 5961010667178
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Part No Manufacturer Item Name QTY RFQ VA75-0077-1 Selex Galileo Ltd transistor Avl RFQ VA-75-0077-001 Selex Galileo Ltd transistor Avl RFQ AM2041910 Rohde And Schwarz Inc transistor Avl RFQ 9337 230 50682 Thales Optronics Limited transistor Avl RFQ 423-9796 Paeaeesikunta Logistiikkaosasto transistor Avl RFQ 3N204 Texas Instrument Inc transistor Avl RFQ
Characteristics Data of NSN 5961010667178MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT-DUAL GATE ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION T0.72 AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 50.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT CTRD POWER RATING PER CHARACTERISTIC 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION TTQY TERMINAL TYPE AND QUANTITY 4 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | T0.72 |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |