NSN 5961-01-072-2300 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961010722300 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 010722300 |
| NCB Code: USA (01) |
| Manufacturers: General Dynamics C4 Systems Inc , Electronic Industries Association , Philips Ecg Inc Div Of North Ame , Basler Electric Company , Westinghouse Electric Corp , Thales Training And Simulation Inc , Rca Corp , International Rectifier Corporation , General Semiconductor Inc , Powerex Inc , General Instrument Corp , Freescale Semiconductor Inc , Rsm Electron Power Inc , Semicon Components Inc , Pd And E Electronics Llc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SR1046, RELEASE5729, RELEASE 1811, ECG117A, 69-1688 under NSN 5961-01-072-2300 of Semiconductor Device Diode manufactured by General Dynamics C4 Systems Inc, Electronic Industries Association, Philips Ecg Inc Div Of North Ame, Basler Electric Company, Westinghouse Electric Corp.
Federal Supply Class of NSN 5961-01-072-2300 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-072-2300, 5961010722300
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Part No Manufacturer Item Name QTY RFQ SR1046 General Dynamics C4 Systems Inc semiconductor device diode Avl RFQ RELEASE5729 Electronic Industries Association semiconductor device diode Avl RFQ RELEASE 1811 Electronic Industries Association semiconductor device diode Avl RFQ ECG117A Philips Ecg Inc Div Of North Ame semiconductor device diode Avl RFQ 69-1688 Basler Electric Company semiconductor device diode Avl RFQ 5821-04 Westinghouse Electric Corp semiconductor device diode Avl RFQ 5014508-004 Thales Training And Simulation Inc semiconductor device diode Avl RFQ 40891 Rca Corp semiconductor device diode Avl RFQ 20D1 International Rectifier Corporation semiconductor device diode Avl RFQ 1N5399-E3 General Semiconductor Inc semiconductor device diode Avl RFQ 1N5399 Powerex Inc semiconductor device diode Avl RFQ 1N5399 General Semiconductor Inc semiconductor device diode Avl RFQ 1N5399 General Instrument Corp semiconductor device diode Avl RFQ 1N5399 Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N5399 Electronic Industries Association semiconductor device diode Avl RFQ 1N5399 Westinghouse Electric Corp semiconductor device diode Avl RFQ 1N5399 Rsm Electron Power Inc semiconductor device diode Avl RFQ 1N5398 Rsm Electron Power Inc semiconductor device diode Avl RFQ 1N5398 Semicon Components Inc semiconductor device diode Avl RFQ 1N5398 Freescale Semiconductor Inc semiconductor device diode Avl RFQ 1N5398 General Instrument Corp semiconductor device diode Avl RFQ 1N5398 Westinghouse Electric Corp semiconductor device diode Avl RFQ 1N5398 Electronic Industries Association semiconductor device diode Avl RFQ 1N5398 Powerex Inc semiconductor device diode Avl RFQ 1N1057 Pd And E Electronics Llc semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961010722300MRC Criteria Characteristic ABBH INCLOSURE MATERIAL CERAMIC ABHP OVERALL LENGTH 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.104 INCHES MINIMUM AND 0.140 INCHES MAXIMUM AFZC FUNCTION FOR WHICH DESIGNED RECTIFIER ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION D0-15 AXGY MOUNTING METHOD TERMINAL CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 1.4 MAXIMUM FORWARD VOLTAGE, AVERAGE CTQX CURRENT RATING PER CHARACTERISTIC 1.50 AMPERES FORWARD CURRENT, AVERAGE MAXIMUM CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 170.0 DEG CELSIUS CASE TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 80131-RELEASE5729 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | CERAMIC |
| ABHP | OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.104 INCHES MINIMUM AND 0.140 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | RECTIFIER |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | D0-15 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1.4 MAXIMUM FORWARD VOLTAGE, AVERAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.50 AMPERES FORWARD CURRENT, AVERAGE MAXIMUM |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 170.0 DEG CELSIUS CASE |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE5729 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD |