NSN 5961-01-107-6772 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961011076772 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 011076772 |
| NCB Code: USA (01) |
| Manufacturers: Pioneer Magnetics Inc , Power Paragon Inc , General Electric Company , General Semiconductor Inc , Raytheon Aircraft , Joslyn Corp , Bae Systems , Alturdyne Corporation , Oto Melara Spa , Crane Electronics Inc , Hamilton Sundstrand Corporation , Inspektorat Wsparcia Sil Zbrojnych , Invensys Systems Inc , Blackstoneney Ultrasonics Inc , Honeywell International Inc , Datron The Instruments Inc , Rockwell Collins Inc , Semtech Corporation , Rsm Electron Power Inc , Microsemi Corporation , Micro Uspd Inc , L And R Manufacturing Co Inc , Romac Industries Inc , Fairchild Semiconductor Corp , General Instrument Corp , Dynalec Corporation |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers S1F2, JANTX1N5618-S78, IN5618, GZ44326B, G492096-609 under NSN 5961-01-107-6772 of Semiconductor Device Diode manufactured by Pioneer Magnetics Inc, Power Paragon Inc, General Electric Company, General Semiconductor Inc, Raytheon Aircraft.
Federal Supply Class of NSN 5961-01-107-6772 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-107-6772, 5961011076772
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Part No Manufacturer Item Name QTY RFQ S1F2 Pioneer Magnetics Inc semiconductor device diode Avl RFQ JANTX1N5618-S78 Power Paragon Inc semiconductor device diode Avl RFQ IN5618 General Electric Company semiconductor device diode Avl RFQ GZ44326B General Semiconductor Inc semiconductor device diode Avl RFQ G492096-609 Raytheon Aircraft semiconductor device diode Avl RFQ 910800008 Joslyn Corp semiconductor device diode Avl RFQ 910761 Bae Systems semiconductor device diode Avl RFQ 876-14904-2 Alturdyne Corporation semiconductor device diode Avl RFQ 840DR0078 Oto Melara Spa semiconductor device diode Avl RFQ 667SCD0363 Crane Electronics Inc semiconductor device diode Avl RFQ 5E4810 05-0003 Hamilton Sundstrand Corporation semiconductor device diode Avl RFQ 5961PL0713391 Inspektorat Wsparcia Sil Zbrojnych semiconductor device diode Avl RFQ 5359 Invensys Systems Inc semiconductor device diode Avl RFQ 500177 Pioneer Magnetics Inc semiconductor device diode Avl RFQ 4880098 Blackstoneney Ultrasonics Inc semiconductor device diode Avl RFQ 4880032 Blackstoneney Ultrasonics Inc semiconductor device diode Avl RFQ 4025887-503 Honeywell International Inc semiconductor device diode Avl RFQ 376-00034 Datron The Instruments Inc semiconductor device diode Avl RFQ 353-9019-080 Rockwell Collins Inc semiconductor device diode Avl RFQ 353-9009-551 Semtech Corporation semiconductor device diode Avl RFQ 353-9009-551 Rsm Electron Power Inc semiconductor device diode Avl RFQ 353-9009-551 Rockwell Collins Inc semiconductor device diode Avl RFQ 353-9009-551 Microsemi Corporation semiconductor device diode Avl RFQ 353-9009-551 General Semiconductor Inc semiconductor device diode Avl RFQ 353-9009-551 Micro Uspd Inc semiconductor device diode Avl RFQ 30646 L And R Manufacturing Co Inc semiconductor device diode Avl RFQ 30620 L And R Manufacturing Co Inc semiconductor device diode Avl RFQ 1N6622 Romac Industries Inc semiconductor device diode Avl RFQ 1N4937 Fairchild Semiconductor Corp semiconductor device diode Avl RFQ 1N4385GP General Semiconductor Inc semiconductor device diode Avl RFQ 1N4385 General Instrument Corp semiconductor device diode Avl RFQ 16101-055 Dynalec Corporation semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961011076772MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.130 INCHES MINIMUM AND 0.225 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM ADAV OVERALL DIAMETER 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 1.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE AND 30.00 AMPERES FORWARD CURRENT, AVERAGE PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS JUNCTION TEST TEST DATA DOCUMENT 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLEC TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 81349-MIL-PRF-19500/427 GOVERNMENT SPECIFICATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.130 INCHES MINIMUM AND 0.225 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.065 INCHES MINIMUM AND 0.110 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE AND 30.00 AMPERES FORWARD CURRENT, AVERAGE PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/427 GOVERNMENT SPECIFICATION |