NSN 5961-01-110-6858 of Transistor - Parts Details
| Alternative NSN: 5961011106858 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 011106858 |
| NCB Code: USA (01) |
| Manufacturers: Altos Scientific Dba Dicom Industries , Biotek Instruments Inc Dba Biotek , Fluke Corporation , Data Device Corporation |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 2N4123, 26002, 2111-0007, 110-02976-01, 101000016 under NSN 5961-01-110-6858 of Transistor manufactured by Altos Scientific Dba Dicom Industries, Biotek Instruments Inc Dba Biotek, Fluke Corporation, Data Device Corporation.
Federal Supply Class of NSN 5961-01-110-6858 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-110-6858, 5961011106858
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Part No Manufacturer Item Name QTY RFQ 2N4123 Altos Scientific Dba Dicom Industries transistor Avl RFQ 26002 Biotek Instruments Inc Dba Biotek transistor Avl RFQ 2111-0007 Fluke Corporation transistor Avl RFQ 110-02976-01 Altos Scientific Dba Dicom Industries transistor Avl RFQ 101000016 Data Device Corporation transistor Avl RFQ
Characteristics Data of NSN 5961011106858MRC Criteria Characteristic ABBH INCLOSURE MATERIAL PLASTIC ABHP OVERALL LENGTH 0.210 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ABKW OVERALL HEIGHT 0.165 INCHES MAXIMUM ABMK OVERALL WIDTH 0.205 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION JUNCTION CONTACT ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-92 AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.105 INCHES MAXIMUM CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN CTQX CURRENT RATING PER CHARACTERISTIC 200.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM CTRD POWER RATING PER CHARACTERISTIC 350.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION FEAT SPECIAL FEATURES JUNCTION PATTERN ARRANGEMENT: NPN TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ABKW | OVERALL HEIGHT | 0.165 INCHES MAXIMUM |
| ABMK | OVERALL WIDTH | 0.205 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.105 INCHES MAXIMUM |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 350.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |