NSN 5961-01-111-7746 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961011117746 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 011117746 |
| NCB Code: USA (01) |
| Manufacturers: Freescale Semiconductor Inc , On Semiconductors , North American Philips Corp , Sundstrand Corp , Westinghouse Electric Corp , Hamilton Sundstrand Corporation , Bae Systems , Inspektorat Wsparcia Sil Zbrojnych , Rockwell Collins Inc , Wavetek Rockland Inc Division , Paeaeesikunta Logistiikkaosasto |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SZ50195-3, BZX79C3V9, 938D392-3, 7538002P035, 5E4820 51-1006 under NSN 5961-01-111-7746 of Semiconductor Device Diode manufactured by Freescale Semiconductor Inc, On Semiconductors, North American Philips Corp, Sundstrand Corp, Westinghouse Electric Corp.
Federal Supply Class of NSN 5961-01-111-7746 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-111-7746, 5961011117746
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Part No Manufacturer Item Name QTY RFQ SZ50195-3 Freescale Semiconductor Inc semiconductor device diode Avl RFQ SZ50195-3 On Semiconductors semiconductor device diode Avl RFQ BZX79C3V9 North American Philips Corp semiconductor device diode Avl RFQ 938D392-3 Sundstrand Corp semiconductor device diode Avl RFQ 938D392-3 Westinghouse Electric Corp semiconductor device diode Avl RFQ 938D392-3 Hamilton Sundstrand Corporation semiconductor device diode Avl RFQ 7538002P035 Bae Systems semiconductor device diode Avl RFQ 5E4820 51-1006 Hamilton Sundstrand Corporation semiconductor device diode Avl RFQ 5961PL1398064 Inspektorat Wsparcia Sil Zbrojnych semiconductor device diode Avl RFQ 48A54403-3 Freescale Semiconductor Inc semiconductor device diode Avl RFQ 353-2975-001 Rockwell Collins Inc semiconductor device diode Avl RFQ 210039 Wavetek Rockland Inc Division semiconductor device diode Avl RFQ 10133216 Paeaeesikunta Logistiikkaosasto semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961011117746MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM ADAV OVERALL DIAMETER 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM AFZC FUNCTION FOR WHICH DESIGNED ZENER DIODE ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION DO-35 AXGY MOUNTING METHOD TERMINAL CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 3.9 NOMINAL NOMINAL REGULATOR VOLTAGE CTQS VOLTAGE TOLERANCE IN PERCENT -5.0/+5.0 CTQX CURRENT RATING PER CHARACTERISTIC 100.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT NOMINAL CTRD POWER RATING PER CHARACTERISTIC 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS AMBIENT AIR TEST TEST DATA DOCUMENT 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLEC TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ZZZK SPECIFICATION/STANDARD DATA 81349-MIL-PRF-19500/127 GOVERNMENT SPECIFICATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.9 NOMINAL NOMINAL REGULATOR VOLTAGE |
| CTQS | VOLTAGE TOLERANCE IN PERCENT | -5.0/+5.0 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES REPETITIVE PEAK FORWARD CURRENT NOMINAL |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLEC |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/127 GOVERNMENT SPECIFICATION |