NSN 5961-01-126-6830 of Transistor - Parts Details
| Alternative NSN: 5961011266830 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 011266830 |
| NCB Code: USA (01) |
| Manufacturers: National Semiconductor Corp , Siliconix Incorporated Div Silic , Doosan Infracore Portable Power , Fairchild Semiconductor Corp , Rohde And Schwarz Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers J111A, J111, AM2147685 under NSN 5961-01-126-6830 of Transistor manufactured by National Semiconductor Corp, Siliconix Incorporated Div Silic, Doosan Infracore Portable Power, Fairchild Semiconductor Corp, Rohde And Schwarz Inc.
Federal Supply Class of NSN 5961-01-126-6830 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-126-6830, 5961011266830
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Part No Manufacturer Item Name QTY RFQ J111A National Semiconductor Corp transistor Avl RFQ J111A Siliconix Incorporated Div Silic transistor Avl RFQ J111A Doosan Infracore Portable Power transistor Avl RFQ J111 Fairchild Semiconductor Corp transistor Avl RFQ AM2147685 Rohde And Schwarz Inc transistor Avl RFQ
Characteristics Data of NSN 5961011266830MRC Criteria Characteristic ABHP OVERALL LENGTH 0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ABMK OVERALL WIDTH 0.080 INCHES MINIMUM AND 0.105 INCHES MAXIMUM ADAV OVERALL DIAMETER 0.185 INCHES NOMINAL ALAS INTERNAL CONFIGURATION FIELD EFFECT ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-92 AXGY MOUNTING METHOD TERMINAL CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE CTQX CURRENT RATING PER CHARACTERISTIC 10.00 MILLIAMPERES MAXIMUM GATE CURRENT CTRD POWER RATING PER CHARACTERISTIC 350.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 135.0 DEG CELSIUS AMBIENT AIR TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ABMK | OVERALL WIDTH | 0.080 INCHES MINIMUM AND 0.105 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.185 INCHES NOMINAL |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM GATE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 350.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 135.0 DEG CELSIUS AMBIENT AIR |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |