NSN 5961-01-127-3102 of Transistor - Parts Details
| Alternative NSN: 5961011273102 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 011273102 |
| NCB Code: USA (01) |
| Manufacturers: National Semiconductor Corp , Freescale Semiconductor Inc , Harris Corporation , Siliconix Incorporated Div Silic , Selex Galileo Ltd , Rockwell Collins Inc , Paeaeesikunta Logistiikkaosasto |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers U310, Q35-0003-000, FN472L, FN4721, FN4117 under NSN 5961-01-127-3102 of Transistor manufactured by National Semiconductor Corp, Freescale Semiconductor Inc, Harris Corporation, Siliconix Incorporated Div Silic, Selex Galileo Ltd.
Federal Supply Class of NSN 5961-01-127-3102 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-127-3102, 5961011273102
-
Part No Manufacturer Item Name QTY RFQ U310 National Semiconductor Corp transistor Avl RFQ U310 Freescale Semiconductor Inc transistor Avl RFQ Q35-0003-000 Harris Corporation transistor Avl RFQ FN472L Siliconix Incorporated Div Silic transistor Avl RFQ FN4721 Siliconix Incorporated Div Silic transistor Avl RFQ FN4117 Siliconix Incorporated Div Silic transistor Avl RFQ 417 4 05488 Selex Galileo Ltd transistor Avl RFQ 352-1042-010 Rockwell Collins Inc transistor Avl RFQ 10133281 Paeaeesikunta Logistiikkaosasto transistor Avl RFQ
Characteristics Data of NSN 5961011273102MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.150 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ADAV OVERALL DIAMETER 0.230 INCHES MAXIMUM AGAV END ITEM IDENTIFICATION TSC-60(V)6 95104 ALAS INTERNAL CONFIGURATION FIELD EFFECT ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-52 AXGY MOUNTING METHOD TERMINAL AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC -25.0 MAXIMUM GATE TO SOURCE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 20.00 MILLIAMPERES MAXIMUM GATE CURRENT CTRD POWER RATING PER CHARACTERISTIC 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.150 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| AGAV | END ITEM IDENTIFICATION | TSC-60(V)6 95104 |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-52 |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -25.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 20.00 MILLIAMPERES MAXIMUM GATE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |