NSN 5961-01-165-5161 of Transistor - Parts Details
| Alternative NSN: 5961011655161 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 011655161 |
| NCB Code: USA (01) |
| Manufacturers: Texas Instrument Inc , National Semiconductor Corp , Systron Donner Corp |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 2N5248, 101375F, 101375 under NSN 5961-01-165-5161 of Transistor manufactured by Texas Instrument Inc, National Semiconductor Corp, Systron Donner Corp.
Federal Supply Class of NSN 5961-01-165-5161 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-165-5161, 5961011655161
Characteristics Data of NSN 5961011655161MRC Criteria Characteristic ABBH INCLOSURE MATERIAL PLASTIC ABHP OVERALL LENGTH 0.200 INCHES NOMINAL ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ABKW OVERALL HEIGHT 0.160 INCHES NOMINAL ABMK OVERALL WIDTH 0.200 INCHES NOMINAL ALAS INTERNAL CONFIGURATION FIELD EFFECT ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION T0-92 AXGY MOUNTING METHOD TERMINAL CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -30.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 10.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT CTRD POWER RATING PER CHARACTERISTIC 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ABHP | OVERALL LENGTH | 0.200 INCHES NOMINAL |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ABKW | OVERALL HEIGHT | 0.160 INCHES NOMINAL |
| ABMK | OVERALL WIDTH | 0.200 INCHES NOMINAL |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | T0-92 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -30.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |