NSN 5961-01-203-4101 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961012034101 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 012034101 |
| NCB Code: USA (01) |
| Manufacturers: Chip Supply Inc , Microsemi Corporation |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 1N4148 (JANHCA, 1N4148 under NSN 5961-01-203-4101 of Semiconductor Device Diode manufactured by Chip Supply Inc, Microsemi Corporation.
Federal Supply Class of NSN 5961-01-203-4101 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-203-4101, 5961012034101
-
Part No Manufacturer Item Name QTY RFQ 1N4148 (JANHCA Chip Supply Inc semiconductor device diode Avl RFQ 1N4148 Microsemi Corporation semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961012034101MRC Criteria Characteristic ABHP OVERALL LENGTH 2.140 INCHES MINIMUM AND 3.180 INCHES MAXIMUM AGAV III END ITEM IDENTIFICATION B-1B ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE ANODE AYQS TERMINAL CIRCLE DIAMETER 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM CBBL FEATURES PROVIDED GOLD PLATED LEADS CTMZ SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC CTQX CURRENT RATING PER CHARACTERISTIC 200.0 AMPERES MAXIMUM AVERAGE GATE POWER DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT -65.0 DEG CELSIUS AMBIENT AIR AND 175.00 DEG CELSIUS AMBIENT AIR CXCY III PART NAME ASSIGNED BY CONTROLLING AGENCY SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING FEAT SPECIAL FEATURES METALLIZATION: TOP (ANODE) ALUMINUM, BACK (CATHODE) GOLD, AL THICKNESS: 25,000(A) MINIMUM, GOLD THICKNESS: 4,000(A) MINIMUM, CHIP THICKNESS: .010 ,+ OR - .002 PMLC III PRECIOUS MATERIAL AND LOCATION BACK (CATHODE) GOLD PRMT III PRECIOUS MATERIAL GOLD
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 2.140 INCHES MINIMUM AND 3.180 INCHES MAXIMUM |
| AGAV | III END ITEM IDENTIFICATION | B-1B |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.056 INCHES MINIMUM AND 0.075 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | GOLD PLATED LEADS |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, DC |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 200.0 AMPERES MAXIMUM AVERAGE GATE POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -65.0 DEG CELSIUS AMBIENT AIR AND 175.00 DEG CELSIUS AMBIENT AIR |
| CXCY | III PART NAME ASSIGNED BY CONTROLLING AGENCY | SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING |
| FEAT | SPECIAL FEATURES | METALLIZATION: TOP (ANODE) ALUMINUM, BACK (CATHODE) GOLD, AL THICKNESS: 25,000(A) MINIMUM, GOLD THICKNESS: 4,000(A) MINIMUM, CHIP THICKNESS: .010 ,+ OR - .002 |
| PMLC | III PRECIOUS MATERIAL AND LOCATION | BACK (CATHODE) GOLD |
| PRMT | III PRECIOUS MATERIAL | GOLD |